UCC27325DR

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UCC27325DR

IC GATE DRVR LOW-SIDE 8SOIC

  • Nhà sản xuất
  • Ông. Phần #UCC27325DR
  • Gói SOIC (D)-8
  • Bảng dữ liệu
  • Có sẵn7688

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Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Low-Side
ChannelType Independent
NumberofDrivers 2
GateType N-Channel, P-Channel MOSFET
Voltage-Supply 4.5V ~ 15V
LogicVoltage-VILVIH 1V, 2V
Current-PeakOutput(SourceSink) 4A, 4A
InputType Inverting, Non-Inverting
Rise/FallTime(Typ) 20ns, 15ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Tổng quan

Description

The UCC27325DR is a high-speed dual MOSFET driver integrated circuit designed by Texas Instruments. It is used to drive power MOSFETs or IGBTs in various applications, such as switch-mode power supplies, motor control, and other power electronic systems. The device features two non-inverting channels, allowing it to control two separate power transistors.
Key specifications of the UCC27325DR include its ability to drive up to 9A peak output current per channel, ensuring robust performance in high-power applications. It operates over a wide supply voltage range from 4.5V to 15V, making it versatile for different system requirements. The UCC27325DR also offers fast switching times with typical rise and fall times below 20 nanoseconds, which helps in minimizing switching losses and improving efficiency.
Additional features include an enable/disable function, undervoltage lockout for safe operation, and a thermal shutdown feature to protect against overheating. The device is packaged in a space-saving SOIC-8 package, suitable for compact PCB designs. These characteristics make the UCC27325DR a reliable choice for driving high-speed MOSFETs in various power electronic circuits.

Features

The UCC27325DR is a dual low-side MOSFET driver designed for driving power MOSFETs, IGBTs, and similar devices with high speed and efficiency. Key features include:
1. Output Current: It provides high peak current capability with a source current of up to 4 A and a sink current of up to 4 A, allowing for fast switching of MOSFETs and IGBTs.
2. Propagation Delay: The device offers low propagation delay, typically around 25 ns, ensuring responsive and precise control of switching devices.
3. Input Thresholds: It features TTL and CMOS compatible input thresholds, making it easy to interface with digital control signals from microcontrollers or DSPs.
4. Wide Supply Voltage Range: Operates from a wide supply voltage range, typically between 4.5 V and 15 V, suitable for various applications.
5. Temperature Range: The UCC27325DR can operate in a wide temperature range, typically from -40°C to 125°C, making it suitable for industrial applications.
6. Package: Available in an 8-pin SOIC package with PowerPAD for enhanced thermal performance.
7. Enable Function: It includes an enable/disable functionality for greater control in applications.
These features make the UCC27325DR a versatile choice for power management in various electronic applications.

Package

The UCC27325DR is a high-speed dual MOSFET driver from Texas Instruments. It is packaged in an SOIC-8 (Small Outline Integrated Circuit) package type, which is an 8-pin surface mount package designed for easy installation on PCBs.

Pinout

The UCC27325DR is a high-speed dual MOSFET driver integrated circuit. It is housed in an 8-pin SOIC (Small Outline Integrated Circuit) package. The pin functions are as follows:
1. IN1: Input signal for driver 1.
2. IN2: Input signal for driver 2.
3. GND: Ground reference for the device.
4. OUT2: Driver 2 output for driving the gate of a MOSFET.
5. VDD: Supply voltage for the driver.
6. OUT1: Driver 1 output for driving the gate of a MOSFET.
7. NC: No connection.
8. DIS: Disable pin, used for shutting down the driver outputs.
This IC is designed for high-speed switching applications, providing fast rise and fall times to drive MOSFET gates efficiently. It is often used in power supply circuits, motor control, and other applications requiring fast switching of power MOSFETs.

Manufacturer

The UCC27325DR is manufactured by Texas Instruments (TI). Texas Instruments is a global technology company that designs and manufactures semiconductors and integrated circuits. It is headquartered in Dallas, Texas, and is known for producing a wide range of electronic components and systems used in various applications, including consumer electronics, automotive, industrial, and communication devices. TI is particularly recognized for its analog chips and embedded processors, which form the backbone of countless electronic products worldwide.

Application

The UCC27325DR is a high-speed MOSFET driver commonly used in applications requiring efficient power management and switching. Its applications include driving power MOSFETs or IGBTs in switched-mode power supplies (SMPS), motor control systems, DC-DC converters, and other power electronics circuits. It is also utilized in renewable energy systems, such as solar inverters, and in industrial automation for precise control of power devices. Its fast switching capability and robust design make it suitable for high-frequency and high-power applications.

Equivalent

The UCC27325DR is a dual non-inverting MOSFET driver from Texas Instruments. Equivalent products include:
1. MIC4427 from Microchip Technology
2. TC4427 from Microchip Technology
3. FAN3224 from ON Semiconductor
4. IXDN402 from IXYS/IXYS Integrated Circuits Division
5. IR4427 from Infineon Technologies
These alternatives offer similar functionalities, including dual high-speed driver capabilities for MOSFETs or IGBTs. Always verify compatibility regarding voltage, current ratings, and pin configurations before replacing.

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