STW35N60DM2

Hình ảnh chỉ để tham khảo

STW35N60DM2

MOSFET N-CH 600V 28A TO247

  • Nhà sản xuất
  • Ông. Phần #STW35N60DM2
  • Gói TO-247-3
  • Bảng dữ liệu
  • Có sẵn6857

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
Series MDmesh™ DM2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 110mOhm @ 14A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 54 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2400 pF @ 100 V
PowerDissipation(Max) 210W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Tổng quan

Description

The STW35N60DM2 is a N-channel MOSFET designed for high-performance applications, particularly in power management and switching devices. It features a maximum drain-source voltage (VDS) of 600V, a continuous drain current (ID) of 35A, and low on-resistance (RDS(on)) of around 0.18 ohms, which enhances its efficiency and reduces heat generation during operation.
This MOSFET is ideal for use in power supplies, motor control, and other high-voltage applications. With its fast switching capabilities, it enables efficient operation in high-frequency circuits. The device is housed in a DPAK package, facilitating easy thermal management and PCB integration.
Key characteristics include a high breakdown voltage, low gate charge (Qg), and robustness against thermal runaway. These attributes make the STW35N60DM2 suitable for both industrial and consumer electronics applications.

Features

The STW35N60DM2 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current (I_D): It supports a continuous drain current of 35A, allowing efficient power handling.
3. On-Resistance (R_DS(on)): With a low on-resistance of about 0.35 ohms at V_GS = 10V, it ensures minimal power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 2V to 4V, enabling easy drive with standard logic levels.
5. Fast Switching Times: Designed for rapid switching applications, it minimizes switching losses, improving overall efficiency.
6. Package: Available in a DPAK package, it provides effective thermal dissipation.
7. Applications: Commonly used in switch mode power supplies (SMPS), DC-DC converters, and motor control.
These characteristics make the STW35N60DM2 ideal for various power management solutions in both industrial and consumer electronics.

Package

The STW35N60DM2 is housed in a TO-220 package. This package type is commonly used for power devices due to its durability and efficient heat dissipation capabilities.

Pinout

The STW35N60DM2 is a N-channel MOSFET from STMicroelectronics. It has a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET operation (turns it on/off).
2. Drain (D): The terminal through which current flows out when the device is on.
3. Source (S): The terminal through which current flows into the MOSFET.
The STW35N60DM2 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 35A. It features low on-state resistance (R_DS(on)) for improved efficiency, making it suitable for power switching applications such as inverters and motor drives.

Manufacturer

The STW35N60DM2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including analog, digital, and mixed-signal devices. They serve various industries such as automotive, industrial, consumer electronics, and communication. The company is known for its innovation in power management and energy-efficient solutions, as well as its commitment to sustainability and technological advancement.

Application

The STW35N60DM2 is an N-channel MOSFET used in various applications, including power supplies, motor drivers, and converters. It is suitable for high-efficiency switching in industrial equipment, automotive systems, and renewable energy systems, such as solar inverters. Its low on-resistance and high voltage capability make it ideal for use in DC-DC converters and other high-power applications.

Equivalent

The STW35N60DM2 is a N-channel MOSFET with a 600V rating and a 35A continuous current capability. Equivalent products include:
1. IRFHC30 - 600V, 30A
2. FQD30N60 - 600V, 30A
3. MTP35N60 - 600V, 35A
4. STP35NF60 - 600V, 35A
Always verify specifications to ensure compatibility with your application.

Vận chuyển

Phương pháp vận chuyển Chúng tôi

cung cấp dịch vụ vận chuyển toàn cầu thông qua DHL, FedEx, TNT, UPS hoặc bất kỳ nhà giao hàng khác mà bạn lựa chọn.


Tham khảo phí vận chuyển (DHL / FedEx):

Hãng DHL: Chi phí vận chuyển dao động từ $ 25- $ 45 (0,5kg), với thời gian giao hàng ước tính là 2-5 ngày làm việc.

FedEx: Chi phí vận chuyển dao động từ $ 25- $ 40 (0,5kg), với thời gian giao hàng ước tính là 3-7 ngày làm việc.

Sản phẩm UPS: Chi phí vận chuyển dao động từ $ 25- $ 45 (0,5kg), với thời gian giao hàng ước tính là 3-7 ngày làm việc.

TNT: Chi phí vận chuyển dao động từ $ 25- $ 65 (0,5kg), với thời gian giao hàng ước tính là 3-7 ngày làm việc.

EMS: Chi phí vận chuyển dao động từ $ 30- $ 50 (0,5kg), với thời gian giao hàng ước tính là 7-15 ngày làm việc.

Đăng ký Air Mail: Chi phí vận chuyển là $ 2- $ 4 (0.1kg), với thời gian giao hàng ước tính là 5-20 ngày làm việc.

Thanh toán

Payment Methods

Thời hạn thanh toán là 100% trả trước.

Hiện tại, chúng tôi chỉ chấp nhận các phương thức thanh toán dưới đây:

1. PayPal

2. Thẻ tín dụng / ghi nợ

3. Chuyển dây

Tương tự