STH275N8F7-6AG

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STH275N8F7-6AG

MOSFET N-CH 80V 180A H2PAK-6

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Thông số kỹ thuật

Series STripFET™ F7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 193 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 50 V
Power Dissipation (Max) 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package H2PAK-6
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number STH275

Tổng quan

Description

STH275N8F7-6AG is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a low on-resistance, which enhances efficiency and reduces heat generation during operation. The device typically supports high voltage and current ratings, making it suitable for use in automotive, industrial, and consumer electronics.
Key specifications include a maximum drain-source voltage (Vds) and a maximum continuous drain current (Id), allowing it to handle demanding applications. The MOSFET is often characterized by its fast switching speeds, which contribute to improved overall system performance.
Additionally, it is packaged in a compact form factor, facilitating easy integration into circuit designs. The STH275N8F7-6AG is favored for its reliability and effectiveness in achieving high efficiency in DC-DC converters, motor drives, and other power applications. Always consult the manufacturer's datasheet for detailed electrical characteristics and thermal management guidelines.

Features

The STH275N8F7-6AG is a high-performance MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 75V, making it suitable for medium-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 275A, providing robust performance.
3. R_DS(on): It features a low on-resistance of approximately 6.5 mΩ, which minimizes power loss and improves efficiency in switching applications.
4. Thermal Resistance: The MOSFET has a low thermal resistance, allowing for efficient heat dissipation and better thermal management.
5. Package Type: It comes in a TO-220 package, which facilitates easy mounting and heat sinking.
6. Fast Switching: The device is optimized for fast switching speeds, enhancing overall system performance.
7. Applications: It is commonly used in power supplies, motor drives, and other high-current applications.
Overall, the STH275N8F7-6AG is ideal for demanding power electronic applications requiring high efficiency and reliability.

Package

The STH275N8F7-6AG is packaged in a DPAK (TO-252) format. This package type is commonly used for power MOSFETs, providing efficient thermal performance and electrical characteristics in compact designs.

Pinout

The STH275N8F7-6AG is a power MOSFET manufactured by STMicroelectronics. It features a total of 3 pins. The functions of these pins are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.

2. Drain (D): This pin is the output through which the load current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, serving as the return path for the load current when the MOSFET is conducting.
The STH275N8F7-6AG is designed for high-speed switching applications and has a low on-resistance, making it suitable for various power management applications.

Manufacturer

The STH275N8F7-6AG is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of electronic components and systems, including analog, digital, and mixed-signal devices. The company serves various markets such as automotive, industrial, personal electronics, and communication equipment. Established in 1987 through a merger between Italian SGS Microelettronica and French Thomson Semiconducteurs, STMicroelectronics has established itself as a significant player in the semiconductor industry, focusing on innovation and sustainability in electronic solutions.

Application

The STH275N8F7-6AG is an N-channel MOSFET used primarily in power management applications. Its key application areas include DC-DC converters, motor drives, power supplies, and high-efficiency switching circuits. It is suitable for use in automotive, industrial, and consumer electronics due to its high current handling capability and low on-resistance, enhancing energy efficiency and thermal performance.

Equivalent

The STH275N8F7-6AG is an N-channel MOSFET. Equivalent products include the STP275N8F7, IRF275, and FQP30N8. Always verify specifications like RDS(on), VDS, and current ratings for compatibility in your application.

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