STGWA25M120DF3

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STGWA25M120DF3

IGBT 1200V 50A 375W TO247

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Supplier STMicroelectronics
Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 50 A
Current-CollectorPulsed(Icm) 100 A
Vce(on)(Max)@VgeIc 2.3V @ 15V, 25A
Power-Max 375 W
SwitchingEnergy 850µJ (on), 1.3mJ (off)
InputType Standard
GateCharge 85 nC
Td(on/off)@25°C 28ns/150ns
TestCondition 600V, 25A, 15Ohm, 15V
ReverseRecoveryTime(trr) 265 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Tổng quan

Description

The STGWA25M120DF3 is a high-performance power MOSFET designed for various automotive and industrial applications. It features a voltage rating of 1200V and a current rating of 25A, making it suitable for high-voltage switching applications. The device is part of STMicroelectronics' GWA series, which is optimized for efficiency and thermal performance.
Key features include low on-resistance (R_DS(on)), fast switching speeds, and a thermally enhanced package that ensures effective heat dissipation. These characteristics make it ideal for use in power supplies, motor drives, and inverters, particularly in electric and hybrid vehicles.
The STGWA25M120DF3 also supports a wide operating temperature range, enhancing its reliability in demanding environments. Its robust design helps minimize losses and improve overall system efficiency. Overall, this MOSFET is a reliable choice for engineers looking to implement efficient, high-voltage switching solutions in advanced electronic systems.

Features

The STGWA25M120DF3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various applications, particularly in power electronics. Key features include:
1. Voltage Rating: 1200V, allowing for high-voltage applications.
2. Current Rating: 25A continuous collector current, suitable for medium power applications.
3. Low Switching Losses: Optimized for efficient switching in inverter and converter circuits.
4. Fast Switching Speed: Facilitates high-frequency operation, improving overall system efficiency.
5. Thermal Performance: Equipped with a low thermal resistance design for better heat dissipation.
6. Ruggedness: Built to withstand harsh conditions, enhancing reliability in demanding environments.
7. Dual-Mode Operation: Can operate in both PWM (Pulse Width Modulation) and linear modes, providing flexibility in applications.
8. Applications: Ideal for motor drives, power supplies, and renewable energy systems.
These features make the STGWA25M120DF3 a versatile choice for engineers looking for efficiency and performance in power conversion applications.

Package

The STGWA25M120DF3 is packaged in a TO-247 format, which is a type of through-hole package designed for high-power devices, providing good thermal management and robustness for applications in power electronics.

Pinout

The STGWA25M120DF3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) module designed for various applications, such as inverters and power converters. It features a total of 25 pins.
The main functions of these pins include:
1. Gate (G): Controls the on/off switching of the IGBT.
2. Collector (C): The main current-carrying terminal, connected to the load.
3. Emitter (E): The terminal that returns current to the source.
4. Isolation Pins: Provide electrical isolation for safety and reliability.
5. Thermal Monitoring Pins: Used for temperature sensing to prevent overheating.
The module is designed for high efficiency and low switching losses, making it suitable for applications requiring durability and high performance in power electronics.

Manufacturer

The manufacturer of the STGWA25M120DF3 is STMicroelectronics. STMicroelectronics is a global semiconductor company headquartered in Geneva, Switzerland, that designs, manufactures, and markets a wide range of integrated circuits and discrete devices. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovative technologies in microcontrollers, sensors, power management, and analog devices, contributing to advancements in smart and connected applications.

Application

The STGWA25M120DF3 is a high-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) designed for applications in industrial power electronics. Common application areas include motor drives, renewable energy systems (such as solar inverters), power supplies, induction heating, and traction systems in trains. Its efficiency and thermal performance make it suitable for high-frequency and high-temperature operations.

Equivalent

The STGWA25M120DF3 is a 1200V IGBT module. Equivalent products include:
1. Infineon IGBT modules: IKW25N120T2
2. Mitsubishi MDS25-12
3. Fuji Electric 2MBI120N-120
Always check specific datasheets for precise specifications and compatibility.

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