STGW80H65DFB

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STGW80H65DFB

IGBT 650V 120A 469W TO-247

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 120 A
Current-CollectorPulsed(Icm) 240 A
Vce(on)(Max)@VgeIc 2V @ 15V, 80A
Power-Max 469 W
SwitchingEnergy 2.1mJ (on), 1.5mJ (off)
InputType Standard
GateCharge 414 nC
Td(on/off)@25°C 84ns/280ns
TestCondition 400V, 80A, 10Ohm, 15V
ReverseRecoveryTime(trr) 85 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Tổng quan

Description

The STGW80H65DFB is a high-voltage, N-channel power MOSFET designed for use in various applications, including power supplies, converters, and motor drives. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 80A, making it suitable for high-performance applications requiring efficient switching and thermal management.
This device is part of STMicroelectronics' latest generation of MOSFETs, characterized by low on-resistance (R_DS(on)), which enhances efficiency and reduces heat generation during operation. The STGW80H65DFB also offers fast switching capabilities, making it ideal for applications that require rapid transitions, such as resonant converters or switch-mode power supplies.
Additional features include a rugged design for high reliability and an integral gate protection structure, ensuring robustness against voltage spikes. The package options typically include TO-220 and D2PAK, allowing for versatile mounting solutions. Overall, the STGW80H65DFB is a valuable component for engineers seeking to optimize power efficiency and performance in their designs.

Features

The STGW80H65DFB is a high-performance N-channel MOSFET designed for various applications, particularly in power management and conversion. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 80A, facilitating robust power handling.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.065 ohms, which enhances efficiency and reduces power loss during operation.
4. Fast Switching Speeds: The MOSFET supports rapid switching, beneficial for applications in power supplies and converters.
5. Thermal Stability: Designed to operate effectively under high temperatures, it features a high junction temperature rating (T_J) up to 150°C.
6. Package Type: Typically available in TO-247 or similar packages, allowing for efficient heat dissipation.
These features make the STGW80H65DFB ideal for use in industrial equipment, automotive applications, and renewable energy systems.

Package

The STGW80H65DFB is packaged in a TO-247 format. This package type is commonly used for high-power applications, providing excellent thermal performance and ease of mounting.

Pinout

The STGW80H65DFB is an N-channel power MOSFET from STMicroelectronics, designed for high-voltage applications. It features a TO-247 package with a total of three pins.
The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET by applying a voltage to turn it on or off.
2. Drain (D): This is the main current-carrying terminal where the load is connected. It allows current to flow from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the circuit, serving as the return path for current.
The STGW80H65DFB has a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 80A, making it suitable for applications such as power supplies, motor drives, and inverters.

Manufacturer

The STGW80H65DFB is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design, development, manufacturing, and marketing of a wide range of semiconductor solutions, including microcontrollers, sensors, and power management devices. The company serves various sectors, including automotive, industrial, personal electronics, and communication equipment. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation and commitment to sustainable technology, providing high-performance products that help enable a smarter and more connected world.

Application

The STGW80H65DFB is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in industrial applications such as motor drives, renewable energy systems (like solar inverters), and power supplies. Its high efficiency and fast switching capabilities make it suitable for applications requiring high power and reliability, including rail traction and induction heating.

Equivalent

The STGW80H65DFB is a 650V, 80A IGBT. Equivalent products include:
1. Infineon IGBT - FGH40N65SFD
2. ON Semiconductor - MBRF30H065
3. Mitsubishi - CM80DY-24H
Always verify specifications such as voltage, current, and package type before substitution.

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