STGW60V60DF

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STGW60V60DF

IGBT 600V 80A 375W TO247

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 240 A
Vce(on)(Max)@VgeIc 2.3V @ 15V, 60A
Power-Max 375 W
SwitchingEnergy 750µJ (on), 550µJ (off)
InputType Standard
GateCharge 334 nC
Td(on/off)@25°C 60ns/208ns
TestCondition 400V, 60A, 4.7Ohm, 15V
ReverseRecoveryTime(trr) 74 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Tổng quan

Description

The STGW60V60DF is a high-performance N-channel power MOSFET designed for applications requiring efficient power management, such as inverters, motor drives, and power supplies. It belongs to STMicroelectronics' Super Junction technology family, which enhances performance by offering lower on-resistance (RDS(on)) and reduced conduction losses compared to traditional MOSFETs.
Key features include a voltage rating of 600V, making it suitable for high-voltage applications, and a maximum continuous drain current of 60A. The device provides excellent thermal stability and can operate at high temperatures, with a low gate charge (Qg) that enables faster switching speeds, improving overall efficiency.
The STGW60V60DF is packaged in a TO-247 format, allowing for efficient heat dissipation. Its robust design makes it ideal for use in various industrial applications, including renewable energy systems and automotive power electronics. Overall, this MOSFET is favored for its reliability, efficiency, and ability to handle demanding electrical conditions.

Features

The STGW60V60DF is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for power applications. Key features include:
1. Voltage Rating: 600V, suitable for medium voltage applications.
2. Current Rating: Handles continuous collector current up to 60A.
3. Low Switching Losses: Optimized for efficient performance in high-frequency applications.
4. Thermal Stability: Designed to operate reliably at high temperatures, with a maximum junction temperature of 150°C.
5. Fast Switching Speed: Reduces the overall power losses and enhances efficiency in power conversion systems.
6. Robust Packaging: Available in a TO-247 package, facilitating better heat dissipation and mounting.
7. Built-in Diode: Integrated anti-parallel diode for enhanced operation in inverter applications.
These features make the STGW60V60DF ideal for applications such as motor drives, inverters, and power supplies in industrial and renewable energy sectors.

Package

The STGW60V60DF is packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal management and reliability.

Pinout

The STGW60V60DF is a high-voltage MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source, turning the MOSFET on.
2. Drain (D): This is the terminal through which the load current enters the MOSFET. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit. When the MOSFET is activated, current exits through the source.
The STGW60V60DF is designed for high-voltage applications, with a maximum drain-source voltage (VDS) of 600V and a continuous current rating suitable for various power electronic applications.

Manufacturer

The STGW60V60DF is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and producing a wide range of electronic components and systems, including integrated circuits, sensors, and microcontrollers. The company serves various markets such as automotive, industrial, personal electronics, and communications. Headquartered in Geneva, Switzerland, STMicroelectronics is recognized for its innovation and commitment to sustainability, offering products that enhance energy efficiency and performance across different applications.

Application

The STGW60V60DF is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in various application areas such as motor drives, industrial power converters, renewable energy systems (like solar inverters), and power supplies. Its capability to handle high voltages and currents makes it suitable for applications requiring efficient switching and power management in sectors like automotive, industrial automation, and rail transportation.

Equivalent

The STGW60V60DF is a 600V, 60A IGBT. Equivalent products include:
1. Infineon IGBT: FGH60N60SFD
2. ON Semiconductor IGBT: MBRF60-45
3. Nexperia IGBT: PIMF12060E
4. Texas Instruments IGBT: CSD19540KCS
Always verify specifications for exact compatibility in your application.

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