STGW30V60DF

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STGW30V60DF

IGBT TRENCH FS 600V 60A TO-247-3

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100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Power - Max 258 W
Switching Energy 383µJ (on), 233µJ (off)
Input Type Standard
Gate Charge 163 nC
Td (on/off) @ 25°C 45ns/189ns
Test Condition 400V, 30A, 10Ohm, 15V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number STGW30
Current - Collector Pulsed (Icm) 120 A
Reverse Recovery Time (trr) 53 ns

Tổng quan

Description

The STGW30V60DF is a high-voltage, high-current N-channel Power MOSFET from STMicroelectronics, designed for use in various applications, including power management, motor control, and switching power supplies. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 30A, making it suitable for demanding tasks.
This MOSFET has a low on-resistance (R_DS(on)), which minimizes power losses and enhances efficiency. It also has a fast switching speed, allowing for rapid operation in switching applications. The device is packaged in a TO-220 format, facilitating effective heat dissipation and making it easier to integrate into designs.
Overall, the STGW30V60DF is an excellent choice for engineers looking for reliable and efficient components in high-voltage applications, providing robust performance and durability in challenging environments.

Features

The STGW30V60DF is a high-voltage IGBT (Insulated Gate Bipolar Transistor) module designed primarily for industrial applications. Key features include:
1. Voltage Rating: It has a rated voltage of 600V, making it suitable for medium-voltage applications.
2. Current Rating: The module can handle a continuous collector current of up to 30A, which is ideal for power conversion systems.
3. Low Switching Losses: The device is designed for high efficiency with reduced switching losses, enhancing thermal performance.
4. Fast Switching Speed: It offers rapid switching capabilities, which is beneficial for applications requiring high-frequency operations.
5. Built-in Protection: It features integrated anti-parallel diodes for better performance and protection against reverse voltage.
6. Thermal Management: The module includes a robust thermal design, allowing for effective heat dissipation.
7. Package Type: It typically comes in a standard module package for easy integration into power electronic systems.
These attributes make the STGW30V60DF suitable for applications in inverters, converters, and motor drives.

Package

The STGW30V60DF is packaged in a DPAK (or TO-252) package type, which is a surface-mount package commonly used for power transistors. It features three pins for electrical connections and is designed for efficient thermal performance.

Pinout

The STGW30V60DF is a 30A, 600V IGBT (Insulated Gate Bipolar Transistor) designed for power applications. It typically comes in a TO-220 package, which has a pin count of 3.
The pin functions are as follows:
1. Gate (G) - This pin controls the switching of the IGBT. A voltage applied to this gate allows the device to turn on and conduct current.
2. Collector (C) - This pin is the main current-carrying terminal and connects to the load. When the IGBT is turned on, current flows from the collector to the emitter.
3. Emitter (E) - This pin connects to the ground or negative side of the circuit.
The STGW30V60DF is commonly used in applications such as motor drives, inverters, and power supply circuits.

Manufacturer

The STGW30V60DF is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor solutions, including microcontrollers, power management chips, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. The company is headquartered in Geneva, Switzerland, and operates in over 35 countries, focusing on innovation and sustainability in electronic components.

Application

The STGW30V60DF is a 600V, 30A IGBT (Insulated Gate Bipolar Transistor) designed for various applications, including power converters, induction heating, motor drives, and UPS systems. It is commonly used in industrial and automotive sectors for its efficient switching characteristics and high voltage capabilities, making it suitable for applications requiring high power handling and thermal performance.

Equivalent

The STGW30V60DF is a 600V, 30A IGBT. Equivalent products include the Infineon IGBT FGH60N60SMD, Mitsubishi MGF60N60HDF, and ON Semiconductor FGH50N60. Always verify specifications such as voltage, current, and switching characteristics to ensure compatibility for your specific application.

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