STGF19NC60KD

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STGF19NC60KD

IGBT 600V 16A 32W TO220FP

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
Series PowerMESH™
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 16 A
Current-CollectorPulsed(Icm) 75 A
Vce(on)(Max)@VgeIc 2.75V @ 15V, 12A
Power-Max 32 W
SwitchingEnergy 165µJ (on), 255µJ (off)
InputType Standard
GateCharge 55 nC
Td(on/off)@25°C 30ns/105ns
TestCondition 480V, 12A, 10Ohm, 15V
ReverseRecoveryTime(trr) 31 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-220-3 Full Pack

Tổng quan

Description

STGF19NC60KD is a specific model of a semiconductor device, often referring to a type of insulated gate bipolar transistor (IGBT) or power module commonly used in various applications such as motor drives, renewable energy systems, and industrial machinery. These devices are designed to efficiently control and convert electrical power, combining the benefits of both MOSFETs and bipolar transistors.
Key features typically include high voltage ratings, fast switching capabilities, and robustness, making them suitable for demanding environments. The "60KD" may indicate a voltage rating, while "STGF19" could refer to a specific series or technology employed in the device.
Understanding STGF19NC60KD requires familiarity with power electronics principles, including switching characteristics, thermal management, and application-specific requirements. Proper integration into circuits ensures optimal performance and reliability in power conversion tasks.

Features

The STGF19NC60KD is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 19A, providing robust performance for demanding tasks.
3. R_DS(on): The on-resistance is low, typically around 0.19 ohms, which enhances efficiency by reducing power losses during operation.
4. Fast Switching: It offers fast switching capabilities, which are crucial for applications involving PWM (Pulse Width Modulation).
5. Thermal Performance: The MOSFET has a high thermal dissipation capability, allowing for reliable operation under heavy loads.
6. Packaging: It is available in standard TO-220 or similar packages for easy integration into circuits.
These features make the STGF19NC60KD suitable for applications like power supplies, motor control, and inverter circuits.

Package

The STGF19NC60KD is packaged in a TO-220 form factor. This package is designed for power devices, providing good thermal performance and ease of mounting to heat sinks.

Pinout

The STGF19NC60KD is a Power MOSFET with a pin count of 4. It is designed for high-voltage applications, offering a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 19A.
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching operation.
2. Drain (D) - The main current-carrying terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative side of the circuit.
4. Tab/Case - Often used for heat dissipation and may be connected to the source terminal.
The STGF19NC60KD is suitable for applications like switch-mode power supplies, motor drives, and other power management systems due to its efficient performance and thermal characteristics.

Manufacturer

The STGF19NC60KD is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, and manufactures a broad range of semiconductor products, including power transistors, analog devices, and microcontrollers. Established through a merger in 1987, the company is headquartered in Geneva, Switzerland, and operates in various sectors such as automotive, industrial, personal electronics, and communication. It is known for its innovation in the field of integrated circuits and has a strong presence in both consumer and industrial markets. The STGF19NC60KD itself is a power MOSFET, typically used in applications requiring efficient power management and switching capabilities.

Application

The STGF19NC60KD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as:
1. Power inverters for renewable energy systems (e.g., solar and wind).
2. Motor drives for industrial automation.
3. Uninterruptible power supplies (UPS).
4. Electric vehicle (EV) power management systems.
5. HVAC systems for energy-efficient control.
Its ability to handle high voltages and currents makes it suitable for these applications, enhancing energy efficiency and performance.

Equivalent

The STGF19NC60KD is an N-channel MOSFET with a 600V rating, suitable for high-voltage applications. Equivalent products include the Infineon IKW60N60T, ON Semiconductor MTP60N60E, and Vishay SiHF60N60. These alternatives have similar voltage, current ratings, and performance characteristics. Always verify specific parameters like RDS(on) and gate charge for compatibility.

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