STD65N55F3

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STD65N55F3

MOSFET N-CH 55V 80A DPAK

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Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series STripFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 8.5mOhm @ 32A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 45 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2200 pF @ 25 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Tổng quan

Description

The STD65N55F3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage of 55V and a continuous drain current rating of 65A, making it suitable for high-efficiency switching applications in power management systems, motor drives, and lighting control.
Key specifications include a low on-resistance (R_DS(on)), typically around 0.018 ohms, which reduces power losses during operation. The device also has a fast switching speed, allowing for efficient operation in high-frequency applications. The MOSFET comes in a TO-220 package, providing good thermal dissipation capabilities, essential for handling high power levels.
The STD65N55F3 is favored in designs that require reliability and performance, such as power supplies, converters, and automotive applications. It operates effectively within a wide temperature range and is built to withstand harsh environmental conditions. Overall, it is a versatile component for engineers seeking robust performance in their electronic designs.

Features

The STD65N55F3 is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power switching applications.
2. Current Handling: The device can handle continuous drain currents up to 65A, depending on the thermal conditions.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of around 18 mΩ, which helps reduce conduction losses and improve efficiency.
4. Fast Switching: The MOSFET is designed for fast switching capabilities, which is beneficial in high-frequency applications.
5. Thermal Performance: With a robust package design, it provides excellent thermal performance, allowing for better heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2-4V, enabling it to be driven by standard logic-level signals.
7. Applications: Suitable for use in DC-DC converters, motor drives, and power management systems.
Overall, the STD65N55F3 is an efficient and versatile component for power electronics.

Package

The STD65N55F3 is typically available in a TO-220 package type. This package is designed for power applications, offering efficient thermal performance and easy mounting to heatsinks.

Pinout

The STD65N55F3 is an N-channel MOSFET from STMicroelectronics. It has a total of 3 pins.
1. Gate (G): This pin controls the switching of the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. Current flows into the drain when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. Current exits through the source when the MOSFET is conducting.
The STD65N55F3 is designed for high-efficiency switching applications, with a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of 65A. Its low on-resistance (R_DS(on)) ensures minimal power loss during operation.

Manufacturer

The STD65N55F3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is a multinational corporation that designs, develops, manufactures, and markets a wide range of semiconductor products used in various applications, including automotive, industrial, consumer electronics, and communications. The company is known for its innovative technologies and solutions in power management, analog, and digital products, contributing significantly to the advancement of electronics worldwide. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates in multiple countries and is a key player in the semiconductor industry.

Application

The STD65N55F3 is a high-performance N-channel MOSFET primarily used in power applications such as switch mode power supplies (SMPS), DC-DC converters, and motor control. Its low on-resistance and high current handling capability make it suitable for automotive applications, industrial power systems, and renewable energy systems like solar inverters. Additionally, it can be utilized in battery management systems and electric vehicle power management.

Equivalent

The STD65N55F3 is an N-channel MOSFET with a 65V rating and 55A current handling. Equivalent products include:
1. IRF3205 - 55V, 110A
2. STP55NF06 - 60V, 55A
3. BSC055N65 - 65V, 55A
4. FQP30N60C - 60V, 30A
Always check specific parameters like RDS(on) and package types for compatibility.

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