STD5NM60T4

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STD5NM60T4

MOSFET N-CH 600V 5A DPAK

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Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1Ohm @ 2.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 18 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 400 pF @ 25 V
PowerDissipation(Max) 96W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Tổng quan

Description

The STD5NM60T4 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for applications that require high efficiency and performance in power management and switching applications. The ‘5’ in the part number indicates that it belongs to the 5th generation of devices, offering enhanced features such as improved thermal performance and reduced gate charge.
Key specifications include a maximum drain-source voltage (VDS) of 600V, a continuous drain current (ID) of 5A, and a low on-resistance (RDS(on)), which results in lower power losses during operation. The device typically comes in a TO-220 or similar package, facilitating easy heat dissipation. It is suitable for various applications, including industrial equipment, power supplies, and motor control systems. Overall, the STD5NM60T4 is a reliable choice for designers seeking efficient power solutions in high-voltage contexts.

Features

The STD5NM60T4 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. Here are its key features:
1. Voltage Rating: It can handle up to 600V, making it suitable for high-voltage power applications.
2. Current Rating: The maximum continuous drain current is 5A, allowing for efficient power management.
3. On-Resistance: The typical on-resistance (R_DS(on)) is low, typically around 0.55 ohms, which reduces power losses during operation.
4. Gate Threshold Voltage: It has a V_GS(th) ranging from 2V to 4V, enabling effective switching at lower voltages.
5. Package Type: Available in a TO-220 package, facilitating heat dissipation and easy integration into circuits.
6. Fast Switching Speed: Suitable for high-frequency applications due to its fast switching characteristics.
7. Temperature Range: Operational temperature range is up to 175°C, making it reliable in challenging environments.
These features make the STD5NM60T4 ideal for applications like power supplies, motor drives, and industrial control systems.

Package

The STD5NM60T4 is a N-channel MOSFET packaged in a TO-220 format. This package type provides effective heat dissipation and is commonly used in power applications, ensuring robust performance in various electronic circuits.

Pinout

The STD5NM60T4 is an N-channel MOSFET designed for power applications. It features a total of three pins:
1. Gate (G) - The control terminal used to turn the MOSFET on and off by applying a voltage.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is on. It is connected to the load.
3. Source (S) - The terminal that is typically connected to ground or the lower potential side of the circuit.
This MOSFET operates with a maximum drain-source voltage (V_DS) of 600V and a maximum continuous drain current (I_D) of 5A. It is used in applications such as switching power supplies, motor control, and other high-voltage switching applications.

Manufacturer

The STD5NM60T4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor devices, including power transistors, integrated circuits, and sensors. The company operates in various sectors, including automotive, industrial, consumer electronics, and communication. STMicroelectronics is known for its innovation in technology and its commitment to sustainability, playing a significant role in the development of energy-efficient solutions. The STD5NM60T4 itself is a N-channel MOSFET designed for power applications, offering high voltage and current capabilities.

Application

The STD5NM60T4 is a N-channel MOSFET primarily used in power management applications, such as switch-mode power supplies (SMPS), DC-DC converters, and inverters. It is suitable for high-voltage, high-current applications, making it ideal for industrial motor drives, automotive power systems, and electronic lighting control. Additionally, it can be found in consumer electronics for efficient power switching and energy management systems.

Equivalent

The STD5NM60T4 is a N-channel MOSFET with a 600V rating and a 5A continuous drain current. Equivalent products include the STP5NM60, IRF840, and FQP13N60. It's essential to verify the specific parameters such as Rds(on), gate threshold voltage, and package type to ensure compatibility for your application. Always consult the datasheets for detailed specifications.

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