STD10NM60N

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STD10NM60N

MOSFET N-CH 600V 10A DPAK

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Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 10A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 550mOhm @ 4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 540 pF @ 50 V
PowerDissipation(Max) 70W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Tổng quan

Description

The STD10NM60N is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. It features a voltage rating of 600V and a maximum continuous drain current of 10A, making it suitable for use in switching power supplies, inverter circuits, and other high-voltage applications.
Key specifications include a low on-resistance (RDS(on)), which ensures minimal power loss during operation, and a fast switching speed, allowing for efficient performance in high-frequency applications. The device typically comes in a TO-220 package, facilitating easy heat dissipation and integration into circuit designs.
The STD10NM60N is ideal for engineers and designers looking for reliable and efficient components in power electronics, particularly in applications requiring high voltage and current handling capabilities. Its robustness and efficiency make it a popular choice in both industrial and consumer electronics.

Features

The STD10NM60N is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 10A, allowing for moderate power handling.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.5Ω at V_GS of 10V, which helps minimize conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient switching.
5. Package Type: It is typically available in a TO-220 package, facilitating easy heat dissipation.
6. Fast Switching Speed: The MOSFET features fast switching characteristics, making it ideal for applications like power supplies and motor control.
7. Thermal Resistance: It has a low thermal resistance, enhancing reliability and performance in thermal management.
These features make the STD10NM60N suitable for various applications, including automotive, industrial, and consumer electronics.

Package

The STD10NM60N is typically available in a TO-220 package type, which features a metal tab for heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The STD10NM60N is a N-channel power MOSFET manufactured by STMicroelectronics. It features a total of three pins:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows the device to turn on, enabling current flow between the drain and source.
2. Drain (D) - This pin is the output terminal through which the current flows when the MOSFET is turned on. It connects to the load in a power circuit.
3. Source (S) - This pin is connected to the ground or negative side of the power supply in a typical configuration. It serves as the return path for the current.
The STD10NM60N is designed for high voltage applications, with a maximum voltage rating of 600V and a continuous current rating of 10A. It is commonly used in various power electronics applications, including motor drivers, switch-mode power supplies, and other high-efficiency circuits.

Manufacturer

The STD10NM60N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for producing a wide range of electronic components, including power transistors, microcontrollers, and sensors. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on innovation and sustainability in its product offerings. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates in multiple countries and is recognized for its commitment to research and development in semiconductor technologies.

Application

The STD10NM60N is a N-channel MOSFET commonly used in power applications such as switch mode power supplies (SMPS), motor drivers, and inverters. Its high voltage rating (600V) makes it suitable for applications in industrial equipment, lighting control, and renewable energy systems like solar inverters. Additionally, it is utilized in automotive systems and for high-frequency switching applications due to its low on-resistance and fast switching capabilities.

Equivalent

The STD10NM60N is a 600V N-channel MOSFET. Equivalent products include the IRF840, MTP10N60E, and STP10NM60. Always verify specifications like Rds(on), Vgs, and current ratings when considering substitutes.

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