STB21N90K5

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STB21N90K5

MOSFET N-CH 900V 18.5A D2PAK

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Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH5™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 900 V
Current-ContinuousDrain(Id)@25°C 18.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 299mOhm @ 9A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 43 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1645 pF @ 100 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Tổng quan

Description

The STB21N90K5 is a high-performance N-channel MOSFET designed for various power applications. It features a voltage rating of 900V and a continuous drain current of up to 21A, making it suitable for high-voltage and high-current environments. The device is characterized by low gate charge and on-resistance, which contribute to improved efficiency and reduced heat generation in power electronic circuits.
The MOSFET is typically used in applications such as switched-mode power supplies (SMPS), inverters, and motor control systems. Its robust construction allows for reliable operation in demanding conditions. The device comes in a TO-220 package, which facilitates effective heat dissipation.
Key specifications include a maximum gate-source voltage of ±20V and a maximum junction temperature of 150°C. Overall, the STB21N90K5 is favored for its reliability, efficiency, and suitability for high-voltage applications, making it a popular choice among engineers in power electronics design.

Features

The STB21N90K5 is a high-voltage N-channel MOSFET designed for various applications in power electronics. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 21A at a temperature of 25°C, providing solid performance in current-intensive tasks.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.28 ohms, which contributes to reduced power losses and improved efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for compatibility with various driving circuits.
5. Package Type: It is available in a TO-220 package, facilitating heat dissipation and ease of mounting in power circuit designs.
6. Fast Switching: The device supports high-speed switching capabilities, making it ideal for applications like switch-mode power supplies and inverters.
Overall, the STB21N90K5 is suitable for industrial and consumer electronics applications requiring high efficiency and reliability.

Package

The STB21N90K5 is a power MOSFET packaged in a TO-220 format. This package type provides efficient heat dissipation and is suitable for various applications, including power electronics and switching devices.

Pinout

The STB21N90K5 is a high-voltage N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's switching. Applying a voltage here turns the device on or off.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. Current exits through this pin when the device is conducting.
This MOSFET is designed for applications requiring high voltage handling, with a maximum drain-source voltage of 900V and a continuous drain current rating of 21A. It is commonly used in power supplies, motor drives, and other high-voltage switching applications.

Manufacturer

The STB21N90K5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including power transistors, integrated circuits, and sensors. The company serves various markets, including automotive, industrial, personal electronics, and communication. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation and commitment to sustainability in the semiconductor industry.

Application

The STB21N90K5 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switching power supplies, motor control, and inverters for renewable energy systems. It is also suitable for general-purpose switching applications in consumer electronics and industrial equipment, where high efficiency and thermal performance are crucial.

Equivalent

The STB21N90K5 is a N-channel MOSFET rated for 900V, 21A, and 0.5Ω RDS(on). Equivalent products include:
1. IRF840
2. MTP50N90
3. FQA30N90
4. K20N90
5. STP20N90
Always verify specifications and ensure suitability for your application before substituting components.

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