SKM200GB125D

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SKM200GB125D

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

EU RoHS Compliant
ECCN (US) EAR99
Part Status NRND
Automotive No
PPAP No
Channel Type N
Configuration Dual
Maximum Collector-Emitter Voltage (V) 1200
Typical Collector Emitter Saturation Voltage (V) 3.3
Maximum Gate Emitter Voltage (V) ±20
Maximum Continuous Collector Current (A) 200
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Mounting Screw
Package Height 30.5
Package Width 61.4
Package Length 106.4
PCB changed 3
Supplier Package Case D-56
Pin Count 3

Tổng quan

Description

The SKM200GB125D is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a maximum drain-source voltage (VDS) of 125V and a continuous drain current (ID) of 200A, making it suitable for power switching applications in industrial, automotive, and consumer electronics sectors. The device is characterized by low on-resistance, which minimizes power losses and enhances thermal performance.
Typically packaged in a TO-220 or similar package, the SKM200GB125D is engineered to handle substantial power loads, and its fast switching capabilities make it ideal for converters, inverters, and motor drives. Its robust construction allows it to operate effectively in harsh environments.
Overall, the SKM200GB125D is a versatile and reliable component for engineers looking to optimize power management in their designs.

Features

The SKM200GB125D is a high-performance IGBT module designed for various applications in power electronics. Key features include:
1. Rated Current: 200 A with a maximum voltage rating of 1250 V, making it suitable for medium to high power applications.
2. Low Switching Losses: Designed for efficient operation, reducing energy loss during switching, which enhances overall system efficiency.
3. Thermal Performance: Equipped with a strong thermal management system, it ensures reliable operation under high thermal stress.
4. Compact Design: The module's compact size facilitates easy integration into various systems, saving space and simplifying installation.
5. Robust Construction: Built with high-quality materials to ensure durability and long service life, even in harsh environments.
6. Easy Drive Characteristics: Compatible with standard gate drive circuits, simplifying the design process for engineers.
7. Versatile Applications: Ideal for use in inverter circuits, renewable energy systems, motor drives, and industrial automation.
These features make the SKM200GB125D a versatile choice for modern power electronics applications.

Package

The SKM200GB125D is packaged in a DPAK (TO-252) package type. This surface-mount package is designed for high-efficiency power applications and features a compact form factor suitable for space-constrained designs.

Pinout

The SKM200GB125D is a silicon carbide (SiC) MOSFET power module. It features a total of 6 pins, which are typically configured for the following functions:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Source (S): Connects to the source terminal of the MOSFET.
3. Drain (D): Connects to the drain terminal, carrying the load current.
In typical applications, these pins are arranged to form a half-bridge configuration, allowing for efficient switching in power electronics applications, such as inverters and converters. The module is designed for high efficiency and thermal performance in high-voltage and high-frequency applications. It is important to refer to the specific datasheet for detailed pinouts and electrical characteristics for accurate implementation.

Manufacturer

The SKM200GB125D is manufactured by Sanken Electric Co., Ltd. Sanken Electric is a Japanese company that specializes in the design and production of power semiconductor devices, including diodes, transistors, and integrated circuits. The company is known for its innovative technology and high-quality products, serving various industries such as consumer electronics, automotive, and industrial applications. Sanken Electric focuses on enhancing energy efficiency and performance in electronic components, making it a significant player in the semiconductor market.

Application

The SKM200GB125D is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used primarily in applications such as power inverters, motor drives, renewable energy systems (like solar inverters), induction heating, and industrial equipment. Its ability to handle high current and voltage levels makes it suitable for energy-efficient power conversion and control in various electrical systems.

Equivalent

The SKM200GB125D is an IGBT module, and equivalent products include:
1. IGBT Modules:
- MITSUBISHI CM200DY-24NF
- INFINEON IGBT5 FZ1200R12KE3
- SEMIKRON SKM200GA126D
2. Other Series:
- Fuji Electric 2MBI200N-060
- ON Semiconductor MBR3060
Always verify specifications for compatibility with your application.

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