SIZF906DT-T1-GE3

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SIZF906DT-T1-GE3

MOSFET 2N-CH 30V 60A 8POWERPAIR

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100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Series TrenchFET® Gen IV
Part Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Rds On (Max) @ Id, Vgs 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V, 92nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 15V, 8200pF @ 15V
Power - Max 38W (Tc), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TA)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
Base Product Number SIZF906

Tổng quan

Description

The SIZF906DT-T1-GE3 is a Schottky barrier rectifier produced by Vishay, designed for efficient rectification in various electronic applications. It features a low forward voltage drop, allowing for high efficiency, particularly in power supply circuits and DC-DC converters. The device has a reverse voltage rating of 60V and a forward current rating of 9A, making it suitable for medium power applications.
The Schottky design minimizes switching losses, resulting in improved thermal performance and reliability. Its package type is typically a TO-220, providing good heat dissipation characteristics. The SIZF906DT-T1-GE3 is widely used in applications such as power management, solar inverters, and automotive electronics, where rapid switching and low power loss are critical.
Overall, this component is recognized for its robustness, efficiency, and versatility in modern electronic designs.

Features

The SIZF906DT-T1-GE3 is a Schottky diode designed for high-efficiency switching applications. Key features include:
1. Low Forward Voltage Drop: This diode provides minimal voltage drop during conduction, enhancing energy efficiency.
2. High Speed: The SIZF906DT-T1-GE3 offers fast switching speeds, making it suitable for high-frequency applications.
3. Low Reverse Leakage Current: It exhibits low reverse leakage, reducing power loss and improving reliability.
4. Compact Package: Typically available in a small footprint, it facilitates space-saving designs in electronic circuits.
5. High Temperature Operation: Designed to function effectively in a wide temperature range, ensuring performance stability in various environments.
These features make the SIZF906DT-T1-GE3 ideal for applications such as power supplies, solar inverters, and LED drivers.

Package

The SIZF906DT-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format, which is a surface mount package style commonly used for integrated circuits.

Manufacturer

The manufacturer of the SIZF906DT-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a multinational company that specializes in manufacturing a wide range of electronic components, including resistors, capacitors, inductors, diodes, and other semiconductor devices. Founded in 1962, Vishay is known for its innovative solutions and high-quality products, serving various industries such as automotive, industrial, consumer electronics, telecommunications, and military applications. The company's extensive portfolio includes both passive and active components, making it a key player in the global electronics market.

Application

The SIZF906DT-T1-GE3 is a Schottky diode primarily used in applications such as power management, rectification in switch-mode power supplies, and voltage clamping. Its low forward voltage drop and fast switching capabilities make it suitable for use in DC-DC converters, power inverters, and RF applications. Additionally, it can be employed in battery charging circuits and protection circuits against voltage spikes.

Equivalent

The SIZF906DT-T1-GE3 is a Schottky barrier diode. Equivalent products include the B140, B150, and MBRF20100. However, always verify the specifications such as voltage, current rating, and package type to ensure compatibility with your application.

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