SISS73DN-T1-GE3

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SISS73DN-T1-GE3

MOSFET P-CH 150V 4.4A/16.2A PPAK

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 4.4A (Ta), 16.2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 125mOhm @ 10A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 22 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 719 pF @ 75 V
PowerDissipation(Max) 5.1W (Ta), 65.8W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8S

Tổng quan

Description

The SISS73DN-T1-GE3 is a highly integrated, dual-channel, high-speed, and low-voltage CMOS operational amplifier designed for various applications, including signal conditioning, data acquisition, and instrumentation. Its features include low input offset voltage, low bias current, and high slew rate, making it suitable for precision analog tasks. The device operates with a wide supply voltage range, allowing flexibility in design while maintaining low power consumption.
Key specifications typically include rail-to-rail output, high gain bandwidth, and low total harmonic distortion, which are critical for maintaining signal integrity in high-frequency applications. The SISS73DN-T1-GE3 is packaged in a compact form factor, making it ideal for space-constrained environments. It is commonly used in consumer electronics, industrial equipment, and medical devices.
For design purposes, refer to the manufacturer's datasheet for detailed electrical characteristics, recommended operating conditions, and application circuits to ensure optimal performance.

Features

The SISS73DN-T1-GE3 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (Vds) of 30V.
2. Current Rating: It has a continuous drain current (Id) capability, often around 60A, making it suitable for high-load applications.
3. Low RDS(on): The device exhibits a low on-resistance (RDS(on)), typically in the milliohm range, which minimizes conduction losses and improves efficiency.
4. Fast Switching: It enables high-speed operation, which is beneficial for switching power supply designs.
5. Thermal Performance: The device is designed to handle significant thermal loads with proper heatsinking, allowing for reliable operation in demanding environments.
6. Package Type: It comes in a TO-220 package, facilitating easy heat dissipation and mounting.
These features make the SISS73DN-T1-GE3 suitable for applications in power management, motor control, and other high-performance electronic systems.

Package

The SISS73DN-T1-GE3 is packaged in a standard SOIC-8 (Small Outline Integrated Circuit) form factor, which features an 8-pin configuration suitable for surface mounting on printed circuit boards.

Pinout

The SISS73DN-T1-GE3 is a dual N-channel MOSFET in a surface-mount package. It has a total of 8 pins.
Pin Count and Functions:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connected to the load for the first MOSFET.
3. Source 1 (S1) - Ground connection for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Connected to the load for the second MOSFET.
6. Source 2 (S2) - Ground connection for the second MOSFET.
7. Drain 1 (D1) - Dual function, also connected to the output for the first MOSFET.
8. Drain 2 (D2) - Dual function, also connected to the output for the second MOSFET.
The device is typically used in power management applications, such as DC-DC converters and load switching.

Manufacturer

The SISS73DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a leading global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its extensive portfolio, including resistors, capacitors, inductors, diodes, and MOSFETs, among other components. Vishay serves a wide range of industries, including automotive, consumer electronics, industrial, and telecommunications, providing innovative solutions for various electronic applications. With operations worldwide, Vishay is recognized for its commitment to quality, reliability, and technological advancement in the electronics sector.

Application

The SISS73DN-T1-GE3 is a dual N-channel MOSFET used in various applications, including power management, DC-DC converters, and load switching. It is suitable for high-efficiency power supplies, motor control, and battery management systems. Its low on-resistance and fast switching capabilities make it ideal for automotive and industrial applications, enhancing performance in energy-efficient designs.

Equivalent

The SISS73DN-T1-GE3 is a low dropout (LDO) voltage regulator. Equivalent products include:
1. LM1117 - Adjustable or fixed output options.
2. MIC5205 - Low dropout, low quiescent current.
3. LP2985 - Low noise, low dropout LDO.
4. MIC29302 - Higher current LDO with low dropout.
Always verify specifications such as voltage, current, and package type before substitution.

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