SIS488DN-T1-GE3

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SIS488DN-T1-GE3

MOSFET N-CH 40V 40A PPAK1212-8

100% gốc & amp; Mới

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 40A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 5.5mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 32 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1330 pF @ 20 V
PowerDissipation(Max) 3.7W (Ta), 52W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Tổng quan

Description

The SIS488DN-T1-GE3 is a high-performance, low-power integrated circuit designed for various applications, including data communication and signal processing. It typically features advanced functionality such as high-speed data transmission, efficient processing capabilities, and low latency, making it suitable for use in automotive, industrial, and consumer electronics. The device is commonly used in systems requiring robust performance under varying environmental conditions.
Key specifications may include multiple input/output interfaces, support for various communication protocols, and integration capabilities with other components. Its design often emphasizes power efficiency and reliability, ensuring optimal operation in demanding scenarios. Overall, the SIS488DN-T1-GE3 is ideal for engineers looking to develop sophisticated electronic systems that require reliable data handling and processing capabilities.

Features

The SIS488DN-T1-GE3 is a high-performance, dual N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Operates up to 30V, making it suitable for various low-voltage applications.
2. Current Rating: Capable of handling continuous drain currents of up to 85A, offering robust performance.
3. Low RDS(on): Features low on-resistance (RDS(on)), which enhances efficiency by minimizing power loss during operation.
4. Fast Switching Speed: Provides fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: Offers excellent thermal characteristics, allowing for reliable operation in demanding environments.
6. Package Type: Available in a compact surface-mount package (DPAK), facilitating easier integration into space-constrained designs.
7. RoHS Compliant: Meets environmental standards, ensuring it is free from hazardous substances.
These features make the SIS488DN-T1-GE3 suitable for automotive, industrial, and consumer electronics applications requiring efficient power management solutions.

Package

The SIS488DN-T1-GE3 is packaged in a TSSOP (Thin Shrink Small Outline Package) format, which is designed for surface mounting and provides a compact size suitable for various electronic applications.

Pinout

The SIS488DN-T1-GE3 is a low-voltage differential signaling (LVDS) buffer from ON Semiconductor, primarily used for high-speed data transmission applications. It features a total of 16 pins.
The key functions of the pins include:
- Input/Output Pins (I/O): Used for LVDS signal input and output, facilitating data transmission.
- Power Supply Pins (VCC and GND): VCC provides power to the device, while GND is the ground reference.
- Control Pins: These may include enable/disable functions to control the operation of the buffer.
The device is designed to support high data rates while maintaining signal integrity, making it suitable for various communication applications.

Manufacturer

The SIS488DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Founded in 1962, the company serves various industries, including automotive, industrial, telecommunications, and consumer electronics. Vishay is known for its extensive product portfolio, which includes resistors, capacitors, inductors, diodes, and transistors, among others. The company is committed to innovation and quality, providing essential components that support a wide range of electronic applications.

Application

The SIS488DN-T1-GE3 is a low-voltage, dual-channel, analog switch primarily used in applications such as signal routing, audio and video switching, data acquisition systems, and telecommunications. Its low on-resistance and high-speed switching capabilities make it suitable for consumer electronics, industrial control systems, and medical devices where precise signal integrity is essential.

Equivalent

The SIS488DN-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the SI488DN and BSS138. However, ensure to verify specifications such as voltage, current ratings, and package type when selecting an equivalent part for your application.

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