SI9407BDY-T1-E3

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SI9407BDY-T1-E3

MOSFET P-CH 60V 4.7A 8SO

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 4.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 120mOhm @ 3.2A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 22 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 600 pF @ 30 V
PowerDissipation(Max) 5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Tổng quan

Description

The SI9407BDY-T1-E3 is a high-performance MOSFET driver designed for driving N-channel MOSFETs in various applications, including power management and DC-DC converters. It features a low propagation delay, high peak output current capability, and is optimized for fast switching applications, ensuring efficient operation and reduced power loss. The device operates with a supply voltage range typically between 4.5V to 15V, making it versatile for different circuit designs.
In terms of packaging, the SI9407BDY-T1-E3 is available in a compact SOIC-8 package, allowing for efficient space utilization on PCBs. It is characterized by low on-resistance and high-speed performance, making it suitable for applications in automotive, industrial, and consumer electronics.
Overall, the SI9407BDY-T1-E3 is an effective solution for enhancing the performance of power conversion systems, facilitating improved efficiency and reliability in electronic designs.

Features

The SI9407BDY-T1-E3 is a high-performance N-channel MOSFET designed for various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 30A, allowing it to manage significant loads.
3. R_DS(on): It features a low on-resistance of about 7.5 mΩ at V_GS = 10V, contributing to efficient power management and reduced heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 3V, ensuring compatibility with low-voltage drive circuits.
5. Package Type: The device comes in the DPAK package, which provides good thermal performance and ease of mounting.
6. Fast Switching: Designed for high-speed operation, making it suitable for switching power supplies and DC-DC converters.
These features make the SI9407BDY-T1-E3 ideal for applications in automotive, industrial, and consumer electronics.

Package

The SI9407BDY-T1-E3 is packaged in a SO-8 (Small Outline) surface mount package.

Pinout

The SI9407BDY-T1-E3 is a N-channel MOSFET designed for power management applications. It comes in a DPAK (TO-252) package, which typically has 3 pins.
Pin Count and Functions:
1. Gate (G) - This terminal is used to control the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D) - This is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is activated.
3. Source (S) - This terminal is connected to the ground or the negative side of the power supply in typical applications.
The SI9407BDY-T1-E3 is optimized for low on-resistance and fast switching, making it suitable for applications such as power management, DC-DC converters, and load switching.

Manufacturer

The SI9407BDY-T1-E3 is manufactured by Silicon Labs, a company known for its focus on semiconductor solutions and software for a variety of applications, including the Internet of Things (IoT), industrial automation, consumer electronics, and telecommunications. Silicon Labs specializes in high-performance, energy-efficient ICs (integrated circuits), including mixed-signal, RF, and microcontroller products, catering to diverse markets and customer needs. Their innovative approach emphasizes cutting-edge technology and support for developers, making them a leading player in the semiconductor industry.

Application

The SI9407BDY-T1-E3 is a low-voltage N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, battery management systems, LED drivers, and power switching in automotive, consumer electronics, and industrial devices. It is valued for its high efficiency, fast switching capabilities, and compact design, making it suitable for compact electronic circuits requiring reliable power control.

Equivalent

The SI9407BDY-T1-E3 is a N-channel MOSFET. Equivalent products include the AO3400, BSS138, and IRLZ44N. Always verify specifications such as voltage, current ratings, and R_DS(on) to ensure compatibility for your specific application.

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