SI7852DP-T1-GE3

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SI7852DP-T1-GE3

MOSFET N-CH 80V 7.6A PPAK SO-8

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Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 7.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 16.5mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2V @ 250µA (Min)
GateCharge(Qg)(Max)@Vgs 41 nC @ 10 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.9W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Tổng quan

Description

The SI7852DP-T1-GE3 is a dual N-channel MOSFET designed for high-efficiency power management applications. It features a low on-resistance, enabling it to handle higher currents with minimal energy loss, making it suitable for DC-DC converters, power supplies, and motor control applications. The device offers a maximum drain-source voltage (VDS) rating of 25V and a continuous drain current (ID) of approximately 60A, depending on the thermal conditions.
The SI7852DP-T1-GE3 is packaged in a compact SO-8 surface-mount format, which aids in space-saving designs. Additionally, it includes a low gate charge, allowing for faster switching speeds and improved overall performance in power conversion circuits. This MOSFET is ideal for applications that require robustness, efficiency, and reliability in power delivery systems.

Features

The SI7852DP-T1-GE3 is a dual N-channel MOSFET designed for power management applications. Key features include:
1. Low On-Resistance (R_DS(on)): Provides efficient switching with minimal power loss.
2. High Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for a variety of applications.
3. Fast Switching Speed: Allows for high-frequency operation, improving overall system efficiency.
4. Enhanced Thermal Performance: Designed for better thermal dissipation, ensuring reliability in demanding environments.
5. Compact Package: Offered in a small DPAK package, which saves board space and facilitates easier integration into designs.
6. Low Gate Charge (Q_g): Reduces the energy required for driving the gate, enhancing efficiency in high-speed applications.
7. RoHS Compliant: Meets environmental standards for hazardous substances, making it suitable for a wide range of applications.
These features make the SI7852DP-T1-GE3 ideal for automotive, industrial, and consumer electronics applications where efficiency and reliability are paramount.

Package

The SI7852DP-T1-GE3 is packaged in a 5x6 mm SOIC-8 (Surface-Mount) package type. This configuration allows for efficient heat dissipation and compact integration in various electronic applications.

Pinout

The SI7852DP-T1-GE3 is a N-channel MOSFET with a pin count of 8. Its primary functions include switching and amplification in various electronic applications. The specific pin configuration is as follows:
1. Gate (G) - Controls the switching of the transistor.
2. Drain (D) - The terminal through which the current flows out of the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
4. Gate (G) - Typically, there are two gate pins for enhanced performance.
5. Drain (D) - Two drain pins for improved thermal dissipation.
6. Source (S) - Two source pins for better current handling and thermal management.
7. N/C (Not Connected) - No electrical connection; typically for internal use or layout purposes.
The SI7852DP-T1-GE3 is designed for applications such as power management, load switching, and motor control due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The SI7852DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in discrete semiconductors and passive components. The company specializes in a wide range of electronic components, including diodes, transistors, capacitors, and resistors, serving various industries such as automotive, industrial, consumer electronics, and telecommunications. Founded in 1962, Vishay is known for its innovation and commitment to quality, providing solutions that enhance the performance and efficiency of electronic systems.

Application

The SI7852DP-T1-GE3 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, load switching, and motor control. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, battery management systems, and automotive applications, including electric vehicles.

Equivalent

The SI7852DP-T1-GE3 is a n-channel MOSFET. Equivalent products include the BSS138, IRLML2502, and AO3400. Ensure to verify specifications such as voltage, current ratings, RDS(on), and package type for compatibility with your application. Always consult the datasheets for detailed comparisons.

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