SI7463DP-T1-GE3

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SI7463DP-T1-GE3

MOSFET P-CH 40V 11A PPAK SO-8

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Bảo hành 365 ngày

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Thông số kỹ thuật

Series TrenchFET®
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.2mOhm @ 18.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SI7463

Tổng quan

Description

The SI7463DP-T1-GE3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. It features low on-resistance and fast switching speeds, making it suitable for high-efficiency power conversion and signal switching tasks. The device is part of the Si7463 series, which is notable for its ability to handle high voltages, typically up to 30V, and for its low gate threshold voltage, allowing for easy interfacing with low-voltage control signals.
The package type is a DFN (Dual Flat No-lead), which offers a compact footprint and good thermal performance, essential for applications like DC-DC converters, power management ICs, and motor drivers. Its robust performance characteristics make it a popular choice among designers looking to enhance efficiency and thermal performance in compact electronic designs.
Overall, the SI7463DP-T1-GE3 is ideal for various applications requiring reliable and efficient switching performance.

Features

The SI7463DP-T1-GE3 is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: Operates with a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Supports continuous drain current (I_D) up to 60A, making it suitable for high-current applications.
3. On-Resistance (R_DS(on)): Low on-resistance (approximately 10mΩ at V_GS = 10V), which minimizes power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): Low gate threshold voltage (1-3V), allowing for easy drive capability with low-voltage logic.
5. Thermal Performance: Features a robust package with good thermal dissipation properties, enhancing reliability and performance under load.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat management.
7. Applications: Suitable for DC-DC converters, motor control, and load switching in various consumer and industrial devices.
These features make the SI7463DP-T1-GE3 a versatile choice for engineers looking to optimize power efficiency in their designs.

Package

The SI7463DP-T1-GE3 is packaged in a DPAK (also known as TO-252) format. This surface-mount package is designed for power applications, offering efficient thermal management and a compact footprint suitable for various electronic devices.

Pinout

The SI7463DP-T1-GE3 is a N-channel MOSFET from Vishay Siliconix. It comes in a TO-220 package with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the MOSFET's operation, turning it on or off based on the voltage applied.
2. Drain (D) - This pin connects to the load, allowing current to flow through the MOSFET when it is turned on.
3. Source (S) - This pin is connected to the ground or the lower potential side of the circuit.
The SI7463DP-T1-GE3 is designed for high-speed switching applications and is optimized for low on-resistance (R_ds(on)) and high efficiency.

Manufacturer

The SI7463DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a multinational company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, it operates in various sectors, including automotive, industrial, consumer electronics, telecommunications, and military applications. Vishay is known for its commitment to innovation and quality in the electronics industry, providing a wide range of products such as MOSFETs, resistors, capacitors, and inductors, which are essential for various electronic circuits and systems.

Application

The SI7463DP-T1-GE3 is an N-channel MOSFET primarily used in applications such as power management, load switching, DC-DC converters, and motor control. Its low RDS(on) and fast switching capabilities make it suitable for high-efficiency circuits in automotive, industrial, and consumer electronics. It is also utilized in battery management systems and renewable energy applications.

Equivalent

The SI7463DP-T1-GE3 is a N-channel MOSFET. Equivalent products include the IRF3708, FDS6910, and BSS138. Always verify specifications such as voltage rating, current capacity, and RDS(on) to ensure compatibility in your application.

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