SI4946BEY-T1-GE3

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SI4946BEY-T1-GE3

MOSFET 2N-CH 60V 6.5A 8-SOIC

100% gốc & amp; Mới

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 6.5A
RdsOn(Max)@IdVgs 41mOhm @ 5.3A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 25nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 840pF @ 30V
Power-Max 3.7W
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Tổng quan

Description

The SI4946BEY-T1-GE3 is a high-performance N-channel MOSFET designed for use in power management applications. It features low on-resistance and fast switching speeds, making it suitable for various applications including DC-DC converters, battery management systems, and power supplies. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 60A, it provides robust performance in demanding environments.
The device is housed in a compact surface-mount package (SO-8), which facilitates easy integration into electronic circuits while optimizing space. Its low gate threshold voltage enhances efficiency and allows for better performance at lower input voltages. Additionally, the SI4946BEY-T1-GE3 is optimized for high-frequency operation, contributing to improved overall system efficiency.
In summary, this MOSFET is ideal for applications requiring high efficiency and reliability in power control and management.

Features

The SI4946BEY-T1-GE3 is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of 45A, with a pulsed current rating significantly higher.
3. Low On-Resistance: It has a low R_DS(on) value, typically around 0.0065 Ohms at a gate-source voltage (V_GS) of 10V, which enhances efficiency and reduces power loss.
4. Fast Switching: The MOSFET features quick switching capabilities, supporting high-frequency applications.
5. Thermal Performance: It has a thermal resistance rating that allows for effective heat dissipation, crucial for reliable operation in power applications.
6. Package Type: It comes in a compact SO-8 package, making it suitable for space-constrained designs.
Overall, the SI4946BEY-T1-GE3 is ideal for use in DC-DC converters, motor drivers, and other applications requiring efficient power management.

Package

The SI4946BEY-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) form factor, which features an 8-lead surface-mount configuration.

Pinout

The SI4946BEY-T1-GE3 is a N-channel MOSFET with a pin count of 8. The primary functions of its pins are as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): Connects to the load; current flows out of the drain when the MOSFET is on.
3. Source (S): Connects to ground or the negative terminal of the load; current flows into the source when the MOSFET is on.
4. Body Diode: Internal to the MOSFET, allows current to flow from the source to the drain when reverse-biased.
The device is commonly used in power management applications, including DC-DC converters and motor control. It operates with low on-resistance and high efficiency, making it suitable for a variety of power switching applications.

Manufacturer

The SI4946BEY-T1-GE3 is manufactured by Silicon Labs, a company specializing in semiconductors and software for a wide range of applications. Founded in 1996, Silicon Labs focuses on internet of things (IoT), automotive, industrial, and consumer electronics markets. They are known for their innovative solutions in mixed-signal and RF (radio frequency) technologies, offering products like microcontrollers, sensors, and wireless connectivity solutions. Silicon Labs is recognized for its commitment to high performance, energy efficiency, and ease of integration in electronic designs.

Application

The SI4946BEY-T1-GE3 is a N-channel MOSFET typically used in applications such as DC-DC converters, power management systems, motor control, and load switching. Its low on-resistance and fast switching capabilities make it suitable for efficient power delivery in consumer electronics, telecommunications, and automotive applications.

Equivalent

The SI4946BEY-T1-GE3 is a N-channel MOSFET optimized for low on-resistance and high-speed switching. Equivalent products include:
1. BSS138
2. IRLZ44N
3. FQP30N06L
4. STP16NF06
Always verify specifications such as voltage, current ratings, and package types before substitution.

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