SI2303CDS-T1-GE3

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SI2303CDS-T1-GE3

MOSFET P-CH 30V 2.7A SOT23-3

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Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 2.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 190mOhm @ 1.9A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 8 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 155 pF @ 15 V
PowerDissipation(Max) 1W (Ta), 2.3W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Tổng quan

Description

The SI2303CDS-T1-GE3 is a N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for low voltage applications. With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 3.4A, it is suitable for switching and amplification tasks in various electronic circuits. This MOSFET is characterized by a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation.
It features a compact surface-mount package, making it ideal for space-constrained designs. The device is often used in applications such as power management, battery management systems, and motor control. The SI2303CDS-T1-GE3 is also known for its fast switching speeds, making it a popular choice for high-frequency applications. Overall, this component is valued for its reliability, efficiency, and versatility in modern electronic designs.

Features

The SI2303CDS-T1-GE3 is a N-channel MOSFET designed for low voltage and high-speed switching applications. Its key features include:
1. Voltage Rating: Typically withstands up to 30V, making it suitable for various low-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 3.4A, providing robust performance for power applications.
3. RDS(on): Low on-resistance (around 30 mΩ at VGS = 10V), ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage: A gate threshold voltage range typically between 1V and 2.5V, allowing for compatibility with low-voltage drive signals.
5. Package Type: Available in the compact SOT-23 package, ideal for space-constrained designs.
6. Fast Switching Speed: Suitable for applications requiring rapid on/off switching, contributing to higher efficiency in power management circuits.
7. Applications: Commonly used in load switching, power management, and DC-DC converters.
Overall, the SI2303CDS-T1-GE3 is favored for its reliability and efficiency in various electronic applications.

Package

The SI2303CDS-T1-GE3 is packaged in a SOT-23 (Small Outline Transistor) format. This surface-mount package is commonly used for transistors due to its compact size and efficient thermal performance.

Pinout

The SI2303CDS-T1-GE3 is a N-channel MOSFET with a pin count of 8. Its key functions include serving as a switch in various electronic applications, such as power management and load switching.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The main current-carrying terminal, where the load is connected.
3. Source (S) - The terminal that connects to ground or the negative side of the power supply.
4. Other pins are typically for additional functions like thermal management or protection, depending on the package design.
This device features low on-resistance and fast switching capabilities, making it ideal for applications such as DC-DC converters, motor drivers, and battery management systems. The SI2303 also includes features for enhanced reliability and efficiency, contributing to overall circuit performance.

Manufacturer

The manufacturer of the SI2303CDS-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company specializes in producing a wide range of products, including MOSFETs, diodes, resistors, capacitors, and inductors, catering to various industries such as automotive, industrial, telecommunications, and consumer electronics. Vishay is known for its focus on innovation and quality, providing components that are integral to modern electronic devices and systems.

Application

The SI2303CDS-T1-GE3 is a N-channel MOSFET primarily used in low-voltage applications such as power management, load switching, and DC-DC converters. Its compact size and efficiency make it suitable for portable devices, consumer electronics, and battery management systems. Additionally, it’s utilized in automotive applications and various switching power supplies, enhancing energy efficiency and thermal performance.

Equivalent

The SI2303CDS-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000, depending on specific requirements like voltage and current ratings. Always check the datasheets for precise specifications to ensure suitability for your application.

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