SI1308EDL-T1-GE3

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SI1308EDL-T1-GE3

MOSFET N-CH 30V 1.4A SOT323

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 1.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 10V
RdsOn(Max)@IdVgs 132mOhm @ 1.4A, 10V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 4.1 nC @ 10 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 105 pF @ 15 V
PowerDissipation(Max) 400mW (Ta), 500mW (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SC-70-3

Tổng quan

Description

The SI1308EDL-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) rating of 8A at room temperature, making it suitable for power management, switching applications, and load control.
This MOSFET is known for its low on-resistance (Rds(on)), which minimizes power loss and increases efficiency in circuits. The device is packaged in a compact TO-220 form factor, facilitating easy integration into various electronic designs. Its thermal performance is enhanced by the package, allowing for effective heat dissipation.
Additionally, the SI1308EDL-T1-GE3 is characterized by fast switching speeds, making it ideal for high-frequency applications. Its capabilities make it suitable for use in automotive, industrial, and consumer electronics applications, where reliability and efficiency are paramount. Overall, this MOSFET is a versatile component for modern electronic systems.

Features

The SI1308EDL-T1-GE3 is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for various low-voltage applications.
2. Current Rating: Delivers a continuous drain current (I_D) of up to 8A, making it suitable for moderate power applications.
3. On-Resistance: Low on-resistance (R_DS(on)) minimizes conduction losses, enhancing efficiency in switching applications.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)), allowing it to be easily driven by low voltage logic levels.
5. Package: Available in a compact SOIC-8 package, facilitating easy integration into space-constrained designs.
6. Thermal Performance: Designed to handle significant power dissipation with adequate thermal management.
7. Fast Switching: Suitable for high-speed switching applications in DC-DC converters and other power management systems.
Overall, the SI1308EDL-T1-GE3 is an efficient choice for designers seeking reliable performance in compact electronic devices.

Package

The SI1308EDL-T1-GE3 is packaged in a Small Outline Integrated Circuit (SOIC) format, specifically in a 8-pin SOIC package.

Pinout

The SI1308EDL-T1-GE3 is a low-power, high-performance voltage regulator with an 8-pin package. The pin count is 8.
Here’s a brief overview of its pin functions:
1. Vin (Pin 1): Input voltage supply.
2. GND (Pin 2): Ground connection.
3. Vout (Pin 3): Regulated output voltage.
4. EN (Pin 4): Enable pin to activate or deactivate the regulator.
5. COMP (Pin 5): Compensation pin for stability; connects external components.
6. FB (Pin 6): Feedback pin for voltage regulation.
7. NC (Pin 7): No connection; not internally connected.
8. NC (Pin 8): No connection; not internally connected.
This IC is suitable for various applications due to its low dropout voltage and adjustable output voltage, making it efficient in battery-powered devices.

Manufacturer

The SI1308EDL-T1-GE3 is manufactured by Skyworks Solutions, Inc. Skyworks is a semiconductor company that specializes in the design and manufacture of radio frequency (RF) and analog semiconductors. They provide innovative solutions primarily for the mobile communications market, including RF front-end modules, power amplifiers, and other components that enable wireless communication in smartphones, tablets, and other electronic devices. Skyworks serves a diverse range of industries, including consumer electronics, automotive, IoT, and industrial applications, focusing on enhancing connectivity and performance in modern wireless systems.

Application

The SI1308EDL-T1-GE3 is a N-channel MOSFET primarily used in power management applications, including switching power supplies, DC-DC converters, battery management systems, and load switching. Its low on-resistance and fast switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, where efficiency and thermal performance are critical.

Equivalent

The SI1308EDL-T1-GE3 is an N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. Other alternatives may include the IRLML2502 and AO3400, depending on specific requirements like voltage, current ratings, and package type. Always verify specifications to ensure compatibility.

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