SCTW100N65G2AG

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SCTW100N65G2AG

SICFET N-CH 650V 100A HIP247

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Bảo hành 365 ngày

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Thông số kỹ thuật

Supplier STMicroelectronics
Package Tube
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 18V
RdsOn(Max)@IdVgs 26mOhm @ 50A, 18V
Vgs(th)(Max)@Id 5V @ 5mA
GateCharge(Qg)(Max)@Vgs 162 nC @ 18 V
Vgs(Max) +22V, -10V
InputCapacitance(Ciss)(Max)@Vds 3315 pF @ 520 V
PowerDissipation(Max) 420W (Tc)
OperatingTemperature -55°C ~ 200°C (TJ)
MountingType Through Hole
SupplierDevicePackage HiP247™

Tổng quan

Description

The SCTW100N65G2AG is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power electronic applications. It features a voltage rating of 650V and a continuous drain current of up to 100A, making it suitable for tasks such as power conversion and motor control.
This MOSFET is part of the second generation of superjunction technology, which provides lower on-resistance (RDS(on)) and reduced switching losses compared to older designs. Its efficient thermal performance allows for enhanced reliability and efficiency in high-voltage applications.
Applications include power supplies, renewable energy systems, and electric vehicle (EV) inverters, where high efficiency and fast switching capabilities are critical. The SCTW100N65G2AG also offers fast recovery times and robust gate drive characteristics, contributing to overall system efficiency and performance.
As with any power semiconductor, proper thermal management and circuit design considerations are essential for optimal operation.

Features

The SCTW100N65G2AG is a SiC (silicon carbide) MOSFET designed for high-performance applications in power electronics. Key features include:
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Current Rating: 100A, allowing for substantial power handling capabilities.
3. Low RDS(on): Offers a low on-resistance for enhanced efficiency and reduced heat generation.
4. Fast Switching: Enables high-frequency operation, improving overall system efficiency and reducing switching losses.
5. Thermal Performance: High thermal conductivity ensures better heat dissipation, critical for demanding applications.
6. Robustness: Designed to withstand harsh conditions, making it ideal for automotive, industrial, and renewable energy applications.
7. High-Temperature Operation: Capable of operating at elevated temperatures, which is beneficial in various applications.
These features make the SCTW100N65G2AG suitable for applications like solar inverters, motor drives, and power converters.

Package

The SCTW100N65G2AG is packaged in a TO-247 format. This package type is suitable for high-power applications, providing good thermal performance and ease of mounting.

Pinout

The SCTW100N65G2AG is a silicon carbide (SiC) MOSFET designed for high-efficiency power applications. It has a total pin count of 5. The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching operation.
2. Drain (D) - The terminal through which the load current flows when the device is on.
3. Source (S) - The terminal connected to the ground or the negative side of the supply.
The specific pin arrangement may vary slightly depending on the package type, so it's essential to refer to the manufacturer's datasheet for accurate details. This MOSFET is commonly used in applications like power supplies, inverters, and electric vehicle systems due to its high efficiency and thermal performance.

Manufacturer

The SCTW100N65G2AG is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. They serve various industries, including automotive, industrial, personal electronics, and telecommunications. The company is known for its innovative technologies, particularly in power management, microcontrollers, and sensors. STMicroelectronics is headquartered in Geneva, Switzerland, and operates numerous manufacturing facilities and research centers worldwide, emphasizing sustainability and technological advancement in their products.

Application

The SCTW100N65G2AG is a 650V SiC MOSFET used in high-efficiency power applications. Its primary areas include electric vehicles, renewable energy systems (like solar inverters), industrial power supplies, and motor drives. The device is ideal for applications requiring high switching speeds, thermal performance, and energy efficiency.

Equivalent

The SCTW100N65G2AG is a 650V N-channel MOSFET. Equivalent products include the Infineon IPW100R65C6, ON Semiconductor NTMFS5C620NL, and Vishay SiHG65N60E. Always verify specifications and performance characteristics before replacement.

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