SCT3080KLGC11

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SCT3080KLGC11

SICFET N-CH 1200V 31A TO247N

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tube
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 31A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 18V
RdsOn(Max)@IdVgs 104mOhm @ 10A, 18V
Vgs(th)(Max)@Id 5.6V @ 5mA
GateCharge(Qg)(Max)@Vgs 60 nC @ 18 V
Vgs(Max) +22V, -4V
InputCapacitance(Ciss)(Max)@Vds 785 pF @ 800 V
PowerDissipation(Max) 165W (Tc)
OperatingTemperature 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247N

Tổng quan

Description

The SCT3080KLGC11 is a high-performance silicon carbide (SiC) MOSFET designed for power electronic applications. It offers low on-state resistance, high thermal conductivity, and efficient switching capabilities, making it suitable for demanding environments like electric vehicles, renewable energy systems, and industrial power supplies. With a voltage rating of 800V and a current rating of 30A, the SCT3080KLGC11 is ideal for high-voltage applications. Its fast switching speeds help reduce energy losses, enhancing overall system efficiency. Additionally, the device's robust design contributes to improved reliability and longevity in various applications. SiC technology allows for higher operating temperatures and frequencies compared to traditional silicon devices, making the SCT3080KLGC11 a popular choice for modern power conversion solutions.

Features

The SCT3080KLGC11 is a powerful N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_ds) of 80V, making it suitable for various power applications.
2. Current Capacity: The device can handle continuous drain currents up to 30A, providing robust performance in demanding environments.
3. R_DS(on): Low on-resistance (R_ds(on)) typically around 10 mΩ, which minimizes power loss and improves thermal performance during operation.
4. Fast Switching: Designed for fast switching applications, enhancing efficiency in power management circuits.
5. Package Type: Comes in a TO-220 package for effective heat dissipation and easy mounting.
6. Gate Threshold Voltage: Features a low gate threshold voltage (V_gs(th)), enabling operation with lower gate drive voltages.
These attributes make the SCT3080KLGC11 suitable for applications in power supplies, motor drivers, and other high-power circuits, ensuring reliability and efficiency.

Package

The SCT3080KLGC11 is housed in a TO-220 package type, which is commonly used for power devices. This package provides efficient heat dissipation and is suitable for various electronic applications.

Pinout

The SCT3080KLGC11 is a high-performance N-channel MOSFET with a pin count of 8. Its primary functions include switching and amplification in various electronic circuits, particularly in power management applications.
The pin configuration is as follows:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The terminal through which current flows out when the device is on.
3. Source (S) - The terminal through which current enters when the device is in the on state.
4-8. Additional Pins (for various functions such as body diode and thermal management).
This device is commonly used in applications such as power supplies, motor drivers, and other power switching applications due to its low on-resistance and high-speed switching capabilities. Always refer to the manufacturer's datasheet for detailed specifications and applications.

Manufacturer

The SCT3080KLGC11 is manufactured by SCT, specifically by SCT Semiconductor, which is part of the broader semiconductor industry. SCT is known for producing a range of power semiconductor devices, including MOSFETs, IGBTs, and diodes. The company focuses on providing high-efficiency and high-performance components for various applications such as power conversion, electric vehicles, renewable energy systems, and industrial automation. Their products are designed to meet the increasing demand for energy-efficient solutions in modern electronic systems.

Application

The SCT3080KLGC11 is a high-voltage N-channel MOSFET primarily used in power management applications. Its application areas include:
1. Switching Power Supplies: For efficient voltage conversion.
2. DC-DC Converters: In renewable energy systems and battery management.
3. Motor Drives: In electric vehicles and industrial automation.
4. Lighting Control: For LED drivers and dimming circuits.
5. Telecommunications: In RF amplifiers and signal processing.
Its high efficiency and thermal performance make it suitable for various power electronics applications.

Equivalent

The SCT3080KLGC11 is a Silicon Carbide (SiC) MOSFET. Equivalent products include the C2M0045120D, C3M0065120K, and STPSC12065. When considering replacements, ensure compatibility in voltage, current ratings, and switching characteristics for your specific application. Always verify with the manufacturer’s datasheets for the most accurate substitutions.

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