NVJD5121NT1G

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NVJD5121NT1G

MOSFET 2N-CH 60V 0.295A SC88

100% gốc & amp; Mới

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Bảo hành 365 ngày

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Thông số kỹ thuật

Part Status Active
Base Product Number NVJD5121
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 295mA
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 20V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Packaging Cut Tape (CT), Tape & Reel (TR)

Tổng quan

Description

The NVJD5121NT1G is a high-performance, low-power, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and signal switching. It features a low on-resistance, enabling efficient operation and minimizing heat generation during switching. The device is suitable for use in consumer electronics, power supplies, and automotive applications.
Key specifications typically include a maximum drain-source voltage (V_DS), low gate threshold voltage (V_GS(th)), and a high continuous drain current (I_D). The NVJD5121NT1G is packaged in a compact surface-mount format, which allows for easy integration into modern circuit designs.
It is crucial to refer to the manufacturer's datasheet for detailed electrical characteristics, thermal properties, and application guidelines to ensure optimal performance in your specific circuit.

Features

The NVJD5121NT1G is a highly integrated dual N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Ratings: It typically supports a maximum drain-source voltage (Vds) of 30V.
2. On-Resistance: It has a low on-resistance (Rds(on)), typically around 10-15 mΩ, which improves efficiency by reducing power loss.
3. Current Rating: The device can handle continuous drain currents up to 30A, making it suitable for high-power applications.
4. Fast Switching: Designed for high-speed switching applications, it enables efficient operation in DC-DC converters and motor control circuits.
5. Thermal Performance: It features a compact package design that aids in efficient thermal management.
6. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically low, ensuring compatibility with low-voltage drive applications.
Overall, the NVJD5121NT1G is ideal for use in power supply circuits, LED drivers, and other applications requiring a robust and efficient switching solution.

Package

The NVJD5121NT1G is packaged in a TSOP-8 (Thin Small Outline Package) format, which is a compact, surface-mount package commonly used for memory devices.

Pinout

The NVJD5121NT1G is a 16-pin Dual-Channel Digital Potentiometer designed for various adjustable resistance applications. It features an I2C-compatible interface for communication and control.
Pin Count: 16 pins
Key Functions:
1. VDD (Power Supply): Provides operating voltage.
2. GND: Ground reference.
3. SCL: I2C Clock Line for synchronization.
4. SDA: I2C Data Line for communication.
5. A0, A1: Address pins to configure the device address.
6. Wiper Pins: Two wiper pins (W1, W2) for each potentiometer channel.
7. Terminal Pins: Two terminal pins (T1, T2) for each channel to connect to the resistor network.
8. Miscellaneous Pins: Additional pins for configuration and device functions.
This device allows for digital control of resistance values, making it suitable for applications in audio volume control, gain adjustment, and sensor calibration.

Manufacturer

The NVJD5121NT1G is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in producing discrete, logic, and MOSFET components, serving various applications in consumer electronics, automotive, and industrial sectors. The company focuses on providing high-quality semiconductor products and solutions, leveraging their expertise in manufacturing and design to meet the needs of a wide range of customers in the electronics industry. Nexperia originated from NXP Semiconductors and has established itself as a prominent player in the semiconductor market.

Application

The NVJD5121NT1G is a high-performance, low-dropout (LDO) voltage regulator primarily used in applications such as power management for consumer electronics, battery-powered devices, portable equipment, and automotive electronics. Its compact size and efficiency make it suitable for powering microcontrollers, sensors, and RF devices in mobile and IoT applications. Additionally, it can be utilized in industrial and telecommunications equipment for reliable voltage regulation.

Equivalent

The NVJD5121NT1G is a low-dropout (LDO) voltage regulator. Equivalent products include the LP2992, MCP1700, and LM1117 series. Ensure to check specifications such as output voltage, current rating, and thermal performance to find the best substitute for your application.

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