NVF2955T1G

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NVF2955T1G

MOSFET P-CH 60V 2.6A SOT223

  • Nhà sản xuất
  • Ông. Phần #NVF2955T1G
  • Gói SOT-223
  • Bảng dữ liệu
  • Có sẵn2925

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series Automotive, AEC-Q101
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 2.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 170mOhm @ 750mA, 10V
Vgs(th)(Max)@Id 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 14.3 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 492 pF @ 25 V
PowerDissipation(Max) 1W (Ta)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223 (TO-261)

Tổng quan

Description

The NVF2955T1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. It features a low on-resistance, enabling efficient operation and reduced heat generation during use. This device is commonly used in power management circuits, DC-DC converters, and load switching applications.
The NVF2955T1G has a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) rating of up to 15A, making it suitable for various electronic devices and circuits. Its fast switching capability allows for improved performance in high-frequency applications.
The device is packaged in a compact surface-mount configuration, which aids in space-saving designs and simplifies thermal management. Overall, the NVF2955T1G is a reliable choice for engineers looking for a robust and efficient MOSFET for their electronic applications.

Features

The NVF2955T1G is an N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for medium-voltage applications.
2. Current Rating: It supports continuous drain current (I_D) of up to 5.5A, allowing for efficient power handling.
3. Low R_DS(on): The on-resistance is typically 0.6 ohms, which reduces power loss and improves efficiency during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 1V to 3V, enabling easy drive with low-voltage signals.
5. Package Type: It comes in a compact SOT-23 package, making it suitable for space-constrained designs.
6. Fast Switching: Designed for fast switching applications, it enhances performance in high-frequency circuits.
Overall, the NVF2955T1G is an efficient and versatile MOSFET ideal for power applications in consumer electronics, automotive, and industrial devices.

Package

The NVF2955T1G is packaged in a SOT-23 (Surface Mount) package type.

Pinout

The NVF2955T1G is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The terminal where the current flows out; connected to the load.
3. Source (S): The terminal where the current flows in; typically connected to the ground or negative voltage.
This MOSFET is designed for low voltage applications with a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of up to 9.2A. It features a low on-resistance, making it suitable for power management and switching applications.

Manufacturer

The NVF2955T1G is manufactured by ON Semiconductor, a prominent semiconductor company. Founded in 1999, ON Semiconductor specializes in creating energy-efficient solutions, semiconductors, and integrated circuits for a wide range of applications, including automotive, industrial, telecommunications, and consumer electronics. The company focuses on enabling customers to design innovative products while minimizing energy consumption. ON Semiconductor is recognized for its extensive portfolio, which includes discrete devices, analog ICs, and power management products, catering to various market needs.

Application

The NVF2955T1G is a P-channel MOSFET primarily used in power management applications, including load switching, DC-DC converters, and battery management systems. Its features make it suitable for high-efficiency power systems in consumer electronics, automotive applications, and industrial equipment. Additionally, it's used in signal switching and level shifting in digital circuits.

Equivalent

The NVF2955T1G is a PMOS transistor. Equivalent products include the BSS84, SI2301, and FDS667N. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility for your specific application.

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