NDD04N60ZT4G

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NDD04N60ZT4G

MOSFET N-CH 600V 4.1A DPAK

  • Nhà sản xuất
  • Ông. Phần #NDD04N60ZT4G
  • Gói TO-252-3
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  • Có sẵn6959

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 4.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2Ohm @ 2A, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 29 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 640 pF @ 25 V
PowerDissipation(Max) 83W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Tổng quan

Description

The NDD04N60ZT4G is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 600V, a continuous drain current (I_D) of 4A, and a low on-resistance (R_DS(on)), which enhances efficiency in switching applications. This MOSFET is suitable for use in switch-mode power supplies, inverters, and other high-voltage circuits due to its robust performance.
Key specifications include a gate threshold voltage (V_GS(th)) typically between 2V to 4V, allowing for efficient gate drive with standard logic levels. Its package type is typically TO-220, providing effective thermal management.
The NDD04N60ZT4G is characterized by fast switching speeds, making it ideal for high-frequency applications. It is widely used in consumer electronics, industrial power supplies, and renewable energy systems. Understanding its specifications and applications is crucial for designing efficient electronic circuits.

Features

The NDD04N60ZT4G is an N-channel MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-power applications.
- Drain Current: Can handle continuous drain current (I_D) of up to 4A, allowing for efficient switching operations.
- R_DS(on): Low on-resistance (R_DS(on)) ensures minimal conduction losses, enhancing overall efficiency.
- Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) that enables effective control with standard logic levels.
- Package Type: Typically available in TO-247 or similar packages, facilitating easy installation and heat dissipation.
- Applications: Ideal for use in power supplies, motor drives, and other high-voltage switching applications.
These features combine to make the NDD04N60ZT4G a reliable choice for various electronic and industrial applications requiring efficient power management.

Package

The NDD04N60ZT4G is packaged in a TO-247 form factor, which is a type of through-hole package commonly used for high-power applications. This package provides efficient heat dissipation and robust mechanical stability, making it suitable for various power electronics applications.

Pinout

The NDD04N60ZT4G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a pin count of 3. The functions of the pins are as follows:
1. Gate (G): The control terminal that regulates the flow of current between the Drain and Source. It is voltage-driven.
2. Drain (D): The terminal through which the main current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): The terminal through which the current enters the MOSFET.
This device is rated for a maximum voltage of 600V and a continuous drain current of 4A, making it suitable for various switching and amplification applications in power electronics.

Manufacturer

The NDD04N60ZT4G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor products, including power management, signal management, logic devices, and various discrete components such as MOSFETs and diodes. The company serves various industries, including automotive, communications, consumer electronics, and industrial applications. Established to provide efficient and innovative solutions, ON Semiconductor focuses on energy efficiency and sustainability in its products and technologies.

Application

The NDD04N60ZT4G is a high-voltage N-channel MOSFET primarily used in power management applications. Its key application areas include switch mode power supplies (SMPS), DC-DC converters, motor control circuits, and other high-efficiency power switching applications. It is suitable for industrial automation, consumer electronics, and renewable energy systems due to its ability to handle high voltage and current with low on-state resistance.

Equivalent

The NDD04N60ZT4G is a 600V, 4A N-channel MOSFET. Equivalent products include the STP4NK60Z, IRF840, and FDPF4N60NZ. Always check datasheets for specific parameters like Rds(on), Vgs, and switching characteristics to ensure compatibility for your application.

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