MT48LC16M32S2B5-7 IT

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MT48LC16M32S2B5-7 IT

DRAM

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Description

The MT48LC16M32S2B5-7 IT is a 128Mb (16M x 32) DRAM memory chip produced by Micron Technology. It is designed using a DDR3 (Double Data Rate 3) architecture, which enables faster data transfer rates compared to earlier DDR generations. The part number indicates specific features: "MT" signifies Micron Technology, "48" indicates it is a DRAM, "LC" stands for low power consumption, "16M" represents the number of memory banks, and "32" indicates the data width.
The “B5” refers to the package type, while “-7” indicates the speed grade, with “IT” denoting an industrial temperature range. This DRAM is suited for various applications, including telecommunications, networking equipment, and industrial systems, where reliability and performance in extreme conditions are crucial. It typically operates at a voltage of 1.5V and offers improved energy efficiency, making it ideal for low-power applications.

Features

The MT48LC16M32S2B5-7 IT is a low-power, double data rate (DDR) synchronous dynamic random-access memory (SDRAM) chip manufactured by Micron Technology. Key features include:
1. Density: 512 Megabits (16M x 32 bits).
2. Organization: Supports a 32-bit wide data bus.
3. Speed: Operates at a clock frequency of 7 ns cycle time.
4. Voltage: Low voltage operation, typically around 3.3V.
5. Packaging: Available in a 54-ball TFBGA package.
6. Temperature Range: Industrial temperature range (-40°C to +85°C), suitable for harsh environments.
7. Data Rate: Supports fast access times and high bandwidth for improved performance.
8. Refresh: Includes built-in refresh capabilities for data integrity.
This memory is commonly used in applications requiring reliability and efficiency, such as automotive and industrial systems.

Package

The MT48LC16M32S2B5-7 IT is a DDR3 SDRAM memory chip, typically packaged in a 78-ball FBGA (Fine Ball Grid Array) format.

Pinout

The MT48LC16M32S2B5-7 IT is a 256 Megabit (32MB) DRAM (Dynamic Random Access Memory) device with a pin count of 54. This memory chip operates as a synchronous DRAM and is organized as 16M x 32 bits.
Key functions include:
- Data Storage: It provides high-density memory storage for various applications.
- Synchronous Operation: The device synchronizes its operation with a clock signal, enhancing performance and enabling faster data transfer rates.
- Read/Write Operations: Supports simultaneous read and write operations for efficient data handling.
- Burst Mode: Allows for rapid sequential data access, improving throughput during data transfers.
The “-7” in the part number indicates a speed grade, specifying the timing characteristics, while “IT” designates the temperature grade for industrial applications.

Manufacturer

The manufacturer of the MT48LC16M32S2B5-7 IT is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company produces a variety of memory products, including DRAM, NAND flash memory, and solid-state drives (SSDs), which are used in a wide range of applications such as computing, mobile devices, and data centers. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its innovation in memory technology and plays a crucial role in the development of high-performance computing solutions.

Application

The MT48LC16M32S2B5-7 IT is a DRAM memory chip primarily used in applications such as high-performance computing, networking equipment, telecommunications, and industrial automation. Its features make it suitable for data-intensive applications requiring fast access and storage capabilities, including servers, workstations, and embedded systems. The "IT" designation indicates it's designed for industrial temperature ranges, making it ideal for rugged environments.

Equivalent

The MT48LC16M32S2B5-7 IT is a 1Gb DDR2 SDRAM chip. Equivalent products include:
1. Hynix HYMD516M646D6 – DDR2 1Gb
2. Samsung K4T1G164QE – DDR2 1Gb
3. Nanya NT5CB256M8HA – DDR2 1Gb
Ensure compatibility in specifications like speed, timings, and voltage before substitution.

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