MT28EW01GABA1LJS-0SIT

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MT28EW01GABA1LJS-0SIT

IC FLASH 1GBIT PARALLEL 56TSOP

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Thông số kỹ thuật

Part Status Active
Base Product Number MT28EW01
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 1Gbit
Memory Organization 128M x 8, 64M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Packaging Tray
Access Time 95 ns

Tổng quan

Description

The MT28EW01GABA1LJS-0SIT is a memory chip manufactured by Micron Technology. It is a NAND flash memory device that is typically used in various applications such as consumer electronics, automotive, and industrial systems. This component features a density of 1 gigabit (Gb) and employs a serial interface for communication, allowing for efficient data transfer.
The "MT" prefix indicates it is a Micron part, while the subsequent numbers and letters provide specific information about its architecture, packaging, and features. The “-0SIT” suffix likely denotes the temperature range and other technical specifications.
Key attributes of this memory chip include high reliability, low power consumption, and endurance suitable for data storage. It is designed to meet the demands of modern applications, providing fast access speeds and durability. Overall, the MT28EW01GABA1LJS-0SIT is a versatile solution for embedded systems requiring compact and efficient memory.

Features

The MT28EW01GABA1LJS-0SIT is a NAND flash memory chip manufactured by Micron Technology. Here are its key features:
1. Type: NAND Flash Memory
2. Density: 1 Gb (Gigabit) capacity, suitable for a range of applications.
3. Interface: Supports ONFI (Open NAND Flash Interface) for compatibility with various systems.
4. Voltage: Operates at a standard voltage range of 2.7V to 3.6V.
5. Data Transfer Rates: Capable of high-speed data transfer, enhancing overall system performance.
6. Endurance: Designed for high endurance, suitable for write-intensive applications.
7. Erase Cycle: Supports multiple erase and program cycles, contributing to data reliability.
8. Temperature Range: Operates reliably over a wide temperature range, making it suitable for industrial applications.
9. Package: Available in a compact BGA (Ball Grid Array) package, facilitating easy integration into various devices.
This chip is ideal for applications in mobile devices, consumer electronics, and industrial applications.

Package

The MT28EW01GABA1LJS-0SIT is a NAND flash memory device packaged in a 48-ball FBGA (Fine Ball Grid Array) format. This package type provides a compact design with good thermal and electrical performance, suitable for various applications in mobile and embedded systems.

Pinout

The MT28EW01GABA1LJS-0SIT is a 1 Gigabit (128MB) NAND flash memory device from Micron Technology. It features a total of 48 pins. The primary functions of these pins include power supply, ground, data input/output, control signals, and other auxiliary functions.
Key pin functions include:
- VCC: Power supply for the chip.
- GND: Ground connection.
- DQ[0:7]: Data input/output lines for data transfer.
- WE#: Write enable signal for initiating write operations.
- RE#: Read enable signal for initiating read operations.
- CE#: Chip enable signal to activate the device.
- ALE: Address latch enable for address decoding.
- CLE: Command latch enable for command input.
- R/B#: Ready/Busy signal to indicate the status of the device.
These pins facilitate the operation of the NAND flash for data storage and retrieval in electronic applications.

Manufacturer

The MT28EW01GABA1LJS-0SIT is a NAND flash memory device manufactured by Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in DRAM, NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a diverse range of markets, including computing, mobile, automotive, and industrial sectors. The company is recognized for its innovation in memory technology and plays a significant role in the semiconductor industry, contributing to advancements in data storage and processing capabilities.

Application

The MT28EW01GABA1LJS-0SIT is a NAND flash memory device typically used in applications such as mobile devices, consumer electronics, solid-state drives (SSDs), automotive systems, and networking equipment. Its features support data storage, high-speed data transfer, and reliability, making it suitable for applications requiring efficient, durable, and high-capacity storage solutions.

Equivalent

The MT28EW01GABA1LJS-0SIT is a 1 Gbit (128 MB) NOR flash memory chip from Micron Technology. Equivalent products include the Winbond W25Q80 (8M x 8), Macronix MX25L8006E, and Spansion S25FL080P. Ensure compatibility based on specifications like voltage, package type, and interface when selecting alternatives.

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