MMBT589LT1G

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MMBT589LT1G

TRANS PNP 30V 1A SOT23-3

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 1 A
Voltage-CollectorEmitterBreakdown(Max) 30 V
VceSaturation(Max)@IbIc 650mV @ 200mA, 2A
Current-CollectorCutoff(Max) 100nA
DCCurrentGain(hFE)(Min)@IcVce 100 @ 500mA, 2V
Power-Max 310 mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Tổng quan

Description

The MMBT589LT1G is a surface-mount Schottky barrier diode designed for high-speed switching applications. It features low forward voltage drop and fast response times, making it suitable for use in power management, voltage clamping, and rectification in various electronic circuits. This diode has a reverse voltage rating of approximately 40V and a forward current rating of 1A, which allows it to handle moderate power levels efficiently.
The MMBT589LT1G is packaged in a compact SOT-23 format, facilitating easy integration into space-constrained designs. It is ideal for applications such as RF circuits, power supplies, and any circuit that benefits from low forward voltage and rapid switching capabilities. The diode's low leakage current further enhances its performance in battery-operated devices.
Overall, the MMBT589LT1G is a reliable choice for engineers seeking efficient, compact, and high-speed diode solutions in their electronic designs.

Features

The MMBT589LT1G is a low-power, general-purpose NPN transistor designed for various applications, including switching and amplification. Key features include:
- Voltage Rating: Collector-Emitter Voltage (Vce) up to 30V.
- Current Rating: Maximum collector current (Ic) of 600mA.
- Power Dissipation: Rated power dissipation of 500mW.
- Gain: High current gain (hFE) typically ranges from 100 to 300, ensuring efficient amplification.
- Frequency: Transition frequency (fT) around 100 MHz, suitable for RF applications.
- Package: Available in SOT-23 surface mount package, enhancing space efficiency on PCBs.
- Temperature Range: Operating temperature range from -55°C to +150°C, allowing use in harsh environments.
Overall, the MMBT589LT1G is ideal for low-power applications in consumer electronics, automotive, and industrial circuits.

Package

The MMBT589LT1G is packaged in a SOT-23 (Surface Mount) package type. This compact package is designed for low power applications, providing efficient thermal performance and space-saving benefits on circuit boards.

Pinout

The MMBT589LT1G is a small-signal NPN transistor in a SOT-23 package. It has a pin count of 3. The functions of the pins are as follows:
1. Emitter (E) - This is the pin where the current exits the transistor. It is typically connected to the ground in many configurations.

2. Base (B) - This pin controls the transistor's operation; a small current applied here allows a larger current to flow from the collector to the emitter.
3. Collector (C) - This is the pin where the current enters the transistor. It is connected to the load.
The MMBT589LT1G is commonly used in applications such as amplification and switching due to its reliable performance in low-power environments.

Manufacturer

The manufacturer of the MMBT589LT1G is ON Semiconductor Corporation. ON Semiconductor is a global supplier of semiconductor-based solutions, serving a wide range of markets including automotive, industrial, and consumer electronics. The company specializes in power management, analog, and mixed-signal devices, as well as sensors and other semiconductor products. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on energy-efficient solutions and has a strong emphasis on sustainability and technological innovation. The MMBT589LT1G is a small-signal, low-noise transistor, commonly used in various electronic applications.

Application

The MMBT589LT1G is a low-power NPN transistor primarily used in various applications, including signal amplification, switching, and driver circuits in electronic devices. It is particularly suitable for low-frequency applications in consumer electronics, automotive, and communication systems. Its compact size and efficiency make it ideal for portable and battery-operated devices.

Equivalent

The MMBT589LT1G is a low-power NPN bipolar junction transistor (BJT). Equivalent products include MMBT589, BC547, 2N3904, and 2N2222. However, ensure that the specifications such as voltage, current ratings, and package types match your application needs before substitution.

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