MMBT5089LT1G

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MMBT5089LT1G

TRANS NPN 25V 0.05A SOT23-3

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 50 mA
Voltage-CollectorEmitterBreakdown(Max) 25 V
VceSaturation(Max)@IbIc 500mV @ 1mA, 10mA
Current-CollectorCutoff(Max) 50nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 400 @ 100µA, 5V
Power-Max 300 mW
Frequency-Transition 50MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Tổng quan

Description

The MMBT5089LT1G is a high-speed NPN bipolar junction transistor (BJT) designed for a variety of low-power applications, including switching and amplification tasks. It features a maximum collector current of 600 mA and a maximum collector-emitter voltage of 30 V, making it suitable for low-voltage applications. The transistor has a high current gain (hFE), which allows for efficient signal amplification and switching.
Typically housed in a surface-mount SOT-23 package, the MMBT5089LT1G offers compact design benefits, making it ideal for space-constrained electronic circuits. Its fast switching speed and low saturation voltage enhance its performance in digital and analog circuits.
This transistor is particularly useful in consumer electronics, automotive applications, and various other electronic devices where efficiency and reliability are critical. Overall, the MMBT5089LT1G is a versatile component that supports a wide range of electronic design needs.

Features

The MMBT5089LT1G is a NPN bipolar junction transistor (BJT) designed for low-power switching and amplification applications. Key features include:
1. Voltage Rating: It has a collector-emitter voltage (Vce) of 30V and a collector-base voltage (Vcb) of 30V.
2. Current Rating: The maximum collector current (Ic) is 600mA.
3. Gain: It offers a DC current gain (hFE) ranging from 100 to 300, depending on the collector current.
4. Package: Available in a compact SOT-23 package, facilitating easy integration into various circuit designs.
5. Temperature Range: Operating temperature range is from -55°C to +150°C, making it suitable for diverse applications.
6. Switching Speed: Designed for fast switching capabilities, making it ideal for signal processing.
7. Applications: Commonly used in low-power amplifiers, switching circuits, and general-purpose electronic applications.
Overall, the MMBT5089LT1G is versatile and suitable for various electronic tasks requiring efficient signal management and control.

Package

The MMBT5089LT1G is packaged in a surface-mount SOT-23 configuration. This compact package is designed for efficient thermal and electrical performance in various applications.

Pinout

The MMBT5089LT1G is a bipolar junction transistor (BJT) in a SOT-23 package, with a total of 3 pins.
Pin Configuration:
1. Emitter (E): This pin is used to emit charge carriers (electrons or holes) for the transistor's operation.
2. Base (B): This pin controls the transistor's operation by regulating the current flowing from the emitter to the collector.
3. Collector (C): This pin collects the charge carriers from the emitter, allowing current to flow through the transistor.
Function: The MMBT5089LT1G is designed for general-purpose switching and amplification applications. It can handle a maximum collector current of 600 mA and a maximum collector-emitter voltage of 50 V. Its compact size and efficiency make it suitable for various electronic circuits, including signal amplification and switching in low-power applications.

Manufacturer

The MMBT5089LT1G is manufactured by ON Semiconductor, a global company specializing in semiconductor solutions. ON Semiconductor designs and manufactures a wide range of semiconductor products, including transistors, diodes, integrated circuits, and power management devices. The company serves various industries, such as automotive, industrial, communications, and consumer electronics. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on delivering innovative and energy-efficient products to meet the evolving needs of its customers.

Application

The MMBT5089LT1G is a NPN bipolar junction transistor primarily used in low-power amplification and switching applications. Its compact size and efficiency make it suitable for signal amplification in audio devices, consumer electronics, and low-frequency applications. Additionally, it can be employed in relay drivers, LED drivers, and various general-purpose switching circuits within electronic devices.

Equivalent

The MMBT5089LT1G is a NPN transistor used for general-purpose switching and amplification. Equivalent products include:
1. 2N5089
2. MMBT5089
3. BC548
4. 2N4401
Check the specific datasheets for exact specifications and ensure compatibility with your application requirements.

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