MMBT3906LT1G

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MMBT3906LT1G

TRANS PNP 40V 0.2A SOT23-3

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  • Ông. Phần #MMBT3906LT1G
  • Gói SOT23-3
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100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 200 mA
Voltage-CollectorEmitterBreakdown(Max) 40 V
VceSaturation(Max)@IbIc 400mV @ 5mA, 50mA
DCCurrentGain(hFE)(Min)@IcVce 100 @ 10mA, 1V
Power-Max 300 mW
Frequency-Transition 250MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Tổng quan

Description

The MMBT3906LT1G is a general-purpose PNP bipolar junction transistor (BJT) designed for use in a variety of applications, including amplification and switching. It features a maximum collector current of 800 mA and a maximum collector-emitter voltage of 40 V, making it suitable for low to moderate power applications. The transistor comes in a compact SOT-23 package, which is ideal for space-constrained designs.
Key specifications include a gain bandwidth product (fT) of around 250 MHz, allowing for high-frequency applications. It has a low collector-emitter saturation voltage, enhancing efficiency in switching applications. The MMBT3906LT1G is commonly used in consumer electronics, automotive applications, and industrial equipment.
Overall, its versatility, compact size, and reliability make it a popular choice for engineers designing various electronic circuits. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The MMBT3906LT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Type: PNP transistor, suitable for negative voltage applications.
2. Voltage Rating: Collector-Emitter Voltage (Vce) of 40V, allowing for a wide range of applications.
3. Current Rating: Maximum Collector Current (Ic) of 200mA, making it suitable for low-power circuits.
4. Gain: High current gain (hFE) typical range between 100 to 300, ensuring efficient amplification.
5. Package: Available in SOT-23 package, which is compact and suitable for surface-mount applications.
6. Switching Speed: Capable of operating at high speeds, ideal for switching applications.
7. Thermal Characteristics: Junction temperature range from -55°C to +150°C, suitable for various environmental conditions.
Overall, the MMBT3906LT1G is versatile for use in consumer electronics, amplifiers, and signal processing applications.

Package

The MMBT3906LT1G is packaged in a SOT-23 surface mount package. This compact package is designed for space-saving applications in electronic circuits.

Pinout

The MMBT3906LT1G is a PNP bipolar junction transistor (BJT) packaged in a SOT-23 form factor. It has three pins, which are configured as follows:
1. Base (B): This pin is used to control the transistor's operation. A small current at the base allows a larger current to flow from the collector to the emitter.
2. Collector (C): This pin is the terminal through which the main current flows into the transistor. When activated by the base, current can flow from the collector to the emitter.
3. Emitter (E): This pin is the terminal through which current exits the transistor. In PNP transistors like the MMBT3906LT1G, the emitter is typically connected to a more positive voltage than the collector.
In summary, the MMBT3906LT1G has three pins: Base (B), Collector (C), and Emitter (E), serving the standard functions of a PNP transistor.

Manufacturer

The MMBT3906LT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, and discrete components, primarily serving the automotive, industrial, and communications markets. The company is focused on providing energy-efficient and innovative technologies that facilitate the development of advanced electronic systems.

Application

The MMBT3906LT1G is a PNP bipolar junction transistor used in various applications, including amplification, switching, and signal processing. Common areas include consumer electronics, audio equipment, and automotive applications. It is suitable for low-power, low-voltage circuits, enabling functions such as driving small loads, interfacing with microcontrollers, and as part of analog signal modulation circuits.

Equivalent

The MMBT3906LT1G is a PNP bipolar junction transistor (BJT). Equivalent products include:
1. 2N3906
2. MMBT3906
3. BC558
4. 2N2907 (for similar applications, though it's an NPN)
Always verify specifications like voltage, current ratings, and package types.

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