MJD50T4G

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MJD50T4G

TRANS NPN 400V 1A DPAK

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 1 A
Voltage-CollectorEmitterBreakdown(Max) 400 V
VceSaturation(Max)@IbIc 1V @ 200mA, 1A
Current-CollectorCutoff(Max) 200µA
DCCurrentGain(hFE)(Min)@IcVce 30 @ 300mA, 10V
Power-Max 1.56 W
Frequency-Transition 10MHz
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Tổng quan

Description

MJD50T4G is a type of high-performance, low-dropout (LDO) voltage regulator manufactured by ON Semiconductor. It is designed to provide a stable output voltage with minimal input-output voltage difference, making it suitable for battery-powered applications. The device can deliver up to 50 mA of output current, and its low quiescent current enhances efficiency, particularly in portable devices.
Key features include a wide input voltage range, low output noise, and fast transient response, making it ideal for sensitive analog circuits. The MJD50T4G also incorporates thermal shutdown and overcurrent protection, ensuring reliable operation in various conditions.
Applications range from consumer electronics to automotive and industrial systems, where a stable power supply is critical. Its compact package design allows for easy integration into space-constrained environments. Overall, MJD50T4G serves as a versatile solution for designers seeking reliable power management in their electronic systems.

Features

The MJD50T4G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (Vds) of 50V.
2. Current Rating: It can handle continuous drain currents up to 50A, making it suitable for high-power applications.
3. Rds(on): Low on-resistance (around 0.018Ω), which minimizes power loss and enhances efficiency.
4. Gate Threshold Voltage: A gate threshold voltage (Vgs) typically between 2V to 4V, allowing for easier drive from microcontrollers or logic level signals.
5. Fast Switching Speed: Designed for quick switching, which is beneficial in applications like DC-DC converters and motor drivers.
6. Thermal Performance: Offers good thermal stability and can be mounted on a heat sink for improved cooling.
7. Package Type: Available in TO-220 and DPAK packages, facilitating ease of use in various circuit designs.
These features make the MJD50T4G a versatile choice for power electronics applications.

Package

The MJD50T4G is packaged in a TO-220 form factor. This package type is designed for power semiconductor devices, offering efficient heat dissipation and enhanced thermal performance, making it suitable for various applications in power electronics.

Pinout

The MJD50T4G is a N-channel MOSFET transistor, specifically designed for power switching applications. It features a TO-220 package with a total of three pins. The pin configuration is as follows:
1. Gate (G) - Controls the turning on and off of the MOSFET.
2. Drain (D) - The output where the load is connected and current flows out.
3. Source (S) - The terminal through which the current enters the MOSFET.
This transistor is characterized by its low on-resistance and high-speed switching capabilities, making it suitable for applications such as power supplies, motor control, and automotive electronics. The MJD50T4G is rated for a maximum drain-source voltage (V_DS) of 50V and can handle a continuous drain current (I_D) of up to 10A.

Manufacturer

The MJD50T4G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management solutions, analog devices, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics. It is recognized for its innovative technologies and commitment to sustainability, supporting the development of energy-efficient applications.

Application

The MJD50T4G is a high-voltage, N-channel MOSFET used in various applications, including power management, switching power supplies, motor control, and industrial automation. Its features make it suitable for use in DC-DC converters, LED drivers, and automotive electronics. The device is designed for efficient power handling in demanding environments, contributing to energy savings and enhanced performance in electronic circuits.

Equivalent

The MJD50T4G is a N-channel MOSFET. Equivalent products include the IRF540, STP50NF06, and FQP50N06. Always verify specifications such as voltage, current ratings, and package types to ensure compatibility for your specific application.

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