K4F8E304HB-MGCH

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K4F8E304HB-MGCH

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Description

K4F8E304HB-MGCH is a type of DRAM (Dynamic Random Access Memory) chip manufactured by Samsung. It is part of the DDR (Double Data Rate) memory family, specifically designed for mobile devices and applications requiring high performance with low power consumption.
This memory chip typically features a density of 8 Gb (gigabits), allowing it to store substantial amounts of data while operating efficiently. It employs advanced manufacturing technologies to improve speed and energy efficiency, making it suitable for smartphones, tablets, and other portable electronics.
The "MGCH" in the model number often indicates specific packaging or technological features related to the chip's capabilities. Overall, K4F8E304HB-MGCH is designed to meet the demands of modern applications, providing fast data access and improved battery lifespan for mobile devices.

Features

The K4F8E304HB-MGCH is a DRAM (Dynamic Random-Access Memory) component typically used in mobile applications. It features 4GB of LPDDR3 (Low Power Double Data Rate 3) memory, configured in a 4x32 bit architecture. Operating at a maximum data rate of 1866 MT/s, it provides an efficient balance of performance and power consumption, making it suitable for smartphones, tablets, and other portable devices.
Key features include:
- Density: 4GB capacity for enhanced multitasking.
- Technology: LPDDR3 for low power consumption.
- Speed: Up to 1866 MT/s data rate ensures fast data processing.
- Voltage: Operates at low voltage (typically 1.2V), optimizing battery life.
- Package: Available in a compact BGA (Ball Grid Array) package for space-efficient designs.
This combination of characteristics makes the K4F8E304HB-MGCH a popular choice in modern mobile and consumer electronics.

Package

The K4F8E304HB-MGCH is a DRAM memory chip packaged in a 78-ball FBGA (Fine Pitch Ball Grid Array) format. This packaging is designed for compactness and efficient heat dissipation in electronic applications.

Pinout

The K4F8E304HB-MGCH is a 4-bit dynamic random-access memory (DRAM) chip manufactured by Samsung. It has a total of 84 pins. The primary function of this DRAM is to provide high-density memory storage and fast access times for various electronic applications.
The pin configuration includes power supply pins, ground pins, address pins, data input/output pins, and control pins. These control pins typically consist of signals for read/write operations, chip select, and clock signals, enabling the chip to perform memory access and data transfer operations efficiently.
Overall, the K4F8E304HB-MGCH is designed for use in devices requiring compact and high-performance memory solutions.

Manufacturer

The K4F8E304HB-MGCH is manufactured by Samsung Electronics, a leading global technology company based in South Korea. Samsung Electronics is a subsidiary of the Samsung Group and specializes in the production of a wide range of electronic products, including semiconductors, consumer electronics, and telecommunications equipment. The company is one of the largest manufacturers of memory chips in the world, producing DRAM, NAND flash, and other memory solutions for various applications in mobile devices, computing, and enterprise systems. With a strong emphasis on innovation and research, Samsung plays a significant role in advancing technology in the electronics industry.

Application

The K4F8E304HB-MGCH is a low-power, high-density DRAM memory chip commonly used in mobile devices, tablets, and other consumer electronics. Its application areas include smartphones, smart TVs, and portable gaming devices, where efficient memory performance is crucial for multitasking and high-speed data access. Additionally, it may be used in automotive and IoT devices, enhancing functionality with reliable memory solutions.

Equivalent

The K4F8E304HB-MGCH chip is a 4 Mbit (512K x 8) DRAM. Equivalent products include K4F8E304HB-MGCH from Samsung, MT48LC4M16A2 from Micron, and IS42S16400D from Integrated Silicon Solution (ISSI). Ensure to check specifications like voltage, package type, and access time for compatibility.

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