K4A8G085WC-BITD

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K4A8G085WC-BITD

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100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

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Thông số kỹ thuật

Manufacturer Samsung
Package FBGA-78

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Description

The K4A8G085WC-BITD is a DRAM chip manufactured by Samsung. It is part of the company's high-performance memory solutions, designed to meet the growing demands of computing applications. This chip is an 8Gb DDR4 SDRAM, operating at high speeds and offering efficient power consumption, which makes it suitable for a range of applications from consumer electronics to enterprise-level servers.
Key features of the K4A8G085WC-BITD include a wide data bus for faster data transfers, reduced latency for improved performance, and a low operating voltage that contributes to energy efficiency. The chip also supports various DRAM features such as error-correcting code (ECC) and on-die termination (ODT), enhancing both data integrity and signal quality.
This DRAM module is typically used in scenarios where reliability and speed are paramount, such as data centers, gaming systems, and other high-demand computing environments. Its design aligns with industry standards for DDR4 memory, ensuring compatibility with a broad range of systems and devices.

Features

The K4A8G085WC-BITD is a DRAM chip from Samsung's LPDDR4 series. It is designed for mobile and embedded applications, offering high performance with low power consumption. Key features include:
1. Capacity: 8Gb (Gigabit), which equals 1GB (Gigabyte) when utilized in devices.
2. Speed: Operates at a high data rate of up to 3200 Mbps (megabits per second), which ensures fast data processing and smooth multitasking.
3. Voltage: Supports a low operating voltage of 1.1V, which contributes to its energy efficiency, making it suitable for battery-powered devices.
4. Architecture: Uses a double data rate (DDR) architecture, allowing for efficient data transfer.
5. Package: Available in a compact FBGA form factor, facilitating integration into small form factor devices.
6. Temperature Range: Supports a wide operational temperature range, making it versatile for different environmental conditions.
7. Reliability: Incorporates error-checking features to enhance data integrity.
This chip is ideal for smartphones, tablets, and other portable electronics where balancing performance and power efficiency is critical.

Package

The K4A8G085WC-BITD is a DRAM chip typically packaged in a Fine Ball Grid Array (FBGA) format. This type of package is commonly used for high-performance memory modules, offering efficient heat dissipation and compact size, which are suitable for a wide variety of electronics applications.

Pinout

The K4A8G085WC-BITD is an 8Gb DDR4 SDRAM chip produced by Samsung. It features a 78-ball Fine Ball Grid Array (FBGA) package. The pin count for this component is 78.
The functions of this DDR4 SDRAM include:
1. Data Storage: It provides temporary storage for data that the CPU frequently accesses, enabling faster data retrieval than from permanent storage like hard drives or SSDs.
2. High-Speed Data Transfer: With DDR4 technology, it supports high-speed data transfer rates, improving overall system performance.
3. Low Power Consumption: Designed for lower power consumption than previous generations, making it suitable for devices where energy efficiency is crucial.
4. Error Correction: It offers error-correcting features that enhance data reliability and integrity.
5. Bank Management: Supports multiple bank groups, allowing for more efficient data handling and access.
These features make it suitable for a wide range of computing applications, from personal computers to servers and advanced computing systems.

Manufacturer

The K4A8G085WC-BITD is a memory chip manufactured by Samsung Electronics. Samsung Electronics is a South Korean multinational company known for its wide range of products and services in the technology sector. It is one of the world’s largest producers of electronic devices, specializing in the production of semiconductors, consumer electronics, digital media, and telecommunications equipment. Samsung is a leading manufacturer of memory chips, including DRAM and NAND flash memory, used in various electronic devices such as smartphones, computers, and servers. The company is recognized for its innovation and significant contributions to the advancement of technology worldwide.

Application

The K4A8G085WC-BITD is a type of LPDDR4 DRAM (Low Power Double Data Rate 4 Dynamic Random-Access Memory) used primarily in applications requiring low power consumption and high-performance memory. Common application areas include smartphones, tablets, laptops, and other portable electronic devices. It is also used in automotive infotainment systems, IoT devices, and wearable technology, where energy efficiency and quick data processing are essential. Its compact design and efficiency make it suitable for advanced computing tasks in embedded systems and other high-performance applications.

Equivalent

The K4A8G085WC-BITD chip is a LPDDR4 DRAM module. Equivalent products would typically be other LPDDR4 DRAM chips with similar specifications in terms of capacity, speed, and voltage. Some equivalent chips might include:
1. Micron MT53E1G32D2FW-046 AIT:D
2. SK Hynix H9HCNNN8KUMLHR-NEE
3. Kingston D2516ECMDXGJD
It's essential to verify the precise specifications and compatibility with your application to ensure a proper match.

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