IXGT6N170

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IXGT6N170

IGBT 1700V 12A 75W TO268

  • Nhà sản xuất
  • Ông. Phần #IXGT6N170
  • Gói TO-268-3
  • Bảng dữ liệu
  • Có sẵn4070

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
ProductStatus Active
IGBTType NPT
Voltage-CollectorEmitterBreakdown(Max) 1700 V
Current-Collector(Ic)(Max) 12 A
Current-CollectorPulsed(Icm) 24 A
Vce(on)(Max)@VgeIc 4V @ 15V, 6A
Power-Max 75 W
SwitchingEnergy 1.5mJ (off)
InputType Standard
GateCharge 20 nC
Td(on/off)@25°C 40ns/250ns
TestCondition 1360V, 6A, 33Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Tổng quan

Description

The IXGT6N170 is a high-performance, insulated gate bipolar transistor (IGBT) designed for various applications such as motor drives, power inverters, and industrial equipment. With a voltage rating of 1700 volts and a current rating of 6 amps, it combines the advantages of both MOSFETs and BJTs, providing high efficiency and fast switching capabilities.
This IGBT features a low on-state voltage drop, which reduces power loss during operation, making it suitable for high-frequency applications. Its robust design allows for reliable performance under harsh conditions, and it is often used in renewable energy systems, such as solar inverters and wind power converters.
Key specifications include a maximum gate-emitter voltage of ±20V and a maximum junction temperature of 150°C. The IXGT6N170 is packaged in a compact form factor, facilitating easy integration into various circuit designs. Overall, it serves as an effective solution for power management in modern electronic systems.

Features

The IXGT6N170 is a high-performance insulated gate bipolar transistor (IGBT) designed for various power electronics applications. Key features include:
1. Voltage Rating: It supports a maximum collector-emitter voltage (V_CE) of 1700V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous collector current (I_C) of up to 6A, providing reliable performance in demanding conditions.
3. Low Switching Losses: The IXGT6N170 is designed for low switching losses, enhancing efficiency in switching applications like inverters and converters.
4. Fast Switching Speed: It features fast switching capabilities, which help in reducing electromagnetic interference (EMI) and improving overall system performance.
5. Thermal Performance: The device has a robust thermal design, allowing it to operate effectively at higher temperatures.
6. Applications: Commonly used in industrial motor drives, UPS systems, and renewable energy systems like solar inverters.
Overall, the IXGT6N170 is a reliable choice for applications requiring efficient power conversion and management.

Package

The IXGT6N170 is typically packaged in a TO-247 package type, which is a robust, high-power package designed for efficient thermal management and high voltage applications.

Pinout

The IXGT6N170 is an insulated gate bipolar transistor (IGBT) with a total of 6 pins. The pin configuration is as follows:
1. Gate (G): Controls the operation of the IGBT.
2. Collector (C): The main power terminal where the load is connected.
3. Emitter (E): Connects to the ground or reference point, completing the circuit.
4. Collector (C): A second collector terminal, if applicable, for specific package types.
5. Thermal Pad (TP): Used for heat dissipation, providing thermal management.
6. Base (B): (In certain configurations) Can be used for additional control or protection.
This device is designed for high-speed switching applications, such as inverters, motor drives, and power supplies, offering low conduction losses and efficient performance.

Manufacturer

The IXGT6N170 is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS is known for designing and producing high-performance power semiconductors, including MOSFETs, IGBTs, and rectifiers. The company caters to various industries, such as renewable energy, industrial automation, transportation, and telecommunications. IXYS specializes in devices that provide efficient power control and conversion, contributing to advancements in energy efficiency and sustainability.

Application

The IXGT6N170 is an IGBT (Insulated Gate Bipolar Transistor) primarily used in high-power applications such as motor drives, power inverters, and switched-mode power supplies. Its design allows for efficient switching and handling of high voltages, making it suitable for renewable energy systems, industrial equipment, and traction drives in electric vehicles. Additionally, it can be employed in applications requiring high efficiency and thermal performance.

Equivalent

The IXGT6N170 is an IGBT (Insulated Gate Bipolar Transistor) primarily used in power applications. Equivalent products include:
1. Infineon IGBT: BSM150GA120DN2
2. Semikron: SKM150GB123D
3. ON Semiconductor: MBRF3000
4. STMicroelectronics: STGW30NC60WD
Always verify specifications for voltage, current ratings, and package compatibility before substitution.

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