IRS21867STRPBF

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IRS21867STRPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

100% gốc & amp; Mới

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Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 20V
LogicVoltage-VILVIH 0.8V, 2.5V
Current-PeakOutput(SourceSink) 4A, 4A
InputType CMOS, TTL
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 22ns, 18ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Tổng quan

Description

The IRS21867STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver designed for various industrial and automotive applications. Manufactured by Infineon Technologies, this driver features a floating channel that can be used to drive N-channel power MOSFETs or IGBTs in a half-bridge configuration, making it suitable for motor drive, power supply, and other high-power applications.
Key features include:
- High Side and Low Side Driver: Capable of driving both high-side and low-side transistors with independent input pins, providing flexibility in circuit design.
- Voltage Range: Operates with a wide range of input voltages, supporting up to 600V, making it suitable for high-voltage applications.
- Fast Switching: Offers fast switching capabilities with propagation delays typically around 120 nanoseconds, facilitating efficient power conversion.
- Integrated Bootstrap Diode: Simplifies the design by reducing the need for external components, thus improving reliability and efficiency.
- Protection Features: Includes features like under-voltage lockout and shoot-through prevention to enhance reliability and protect the circuit.
Overall, the IRS21867STRPBF is valued for its robustness and efficiency in driving power transistors in demanding environments.

Features

The IRS21867STRPBF is a high-side and low-side gate driver IC from Infineon Technologies, designed for driving power MOSFETs and IGBTs. Key features include:
1. High and Low-Side Drive Capability: It can drive both high-side and low-side MOSFETs/IGBTs, making it suitable for half-bridge and full-bridge applications.
2. Low Propagation Delay: It offers a fast propagation delay, typically around 120 ns, facilitating high-frequency operation.
3. Floating Channel: The high-side channel is designed to work with a floating voltage up to 600V, making it suitable for high-voltage applications.
4. Bootstrap Circuitry: Integrated bootstrap functionality supports high-side driving without the need for a separate isolated power supply.
5. Under-Voltage Lockout (UVLO): Both high-side and low-side drivers have UVLO protection to prevent operation under insufficient voltages.
6. Shoot-Through Protection: It includes built-in dead-time and shoot-through prevention to avoid simultaneous conduction of both high-side and low-side transistors.
7. CMOS Schmitt-Triggered Inputs: The inputs are compatible with standard CMOS/TTL logic levels.
8. Compact Package: Available in a small SOIC-8 package, it offers a compact solution for space-constrained designs.
These features make the IRS21867STRPBF suitable for a wide range of power conversion and motor control applications.

Package

The IRS21867STRPBF is an IC from Infineon Technologies, and it typically comes in a surface-mount package, specifically the SOIC-8 (Small Outline Integrated Circuit with 8 pins). This type of package is designed for high-density board applications, offering efficient heat dissipation and ease of assembly.

Pinout

The IRS21867STRPBF is a high-side/low-side driver IC designed for driving MOSFETs and IGBTs. It comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. The primary function of this device is to provide gate drive for high-side and low-side switches in a half-bridge configuration, commonly used in motor drive applications and power supply circuits.
The pin configuration is as follows:
1. VCC - Logic and low-side gate drive supply voltage.
2. IN - Logic input for controlling the high and low-side gate outputs.
3. LIN - Logic input for the low-side gate driver.
4. HIN - Logic input for the high-side gate driver.
5. VSS - Logic ground.
6. LO - Low-side gate drive output.
7. VS - High-side floating supply return.
8. HO - High-side gate drive output.
This IC features shoot-through protection, under-voltage lockout, and a floating channel designed for bootstrap operation. It is suitable for high-frequency switching applications.

Manufacturer

The IRS21867STRPBF is manufactured by Infineon Technologies. Infineon is a semiconductor manufacturer known for producing a range of electronic components. They specialize in sectors such as automotive, industrial, and consumer electronics, providing solutions for power management, security, and connectivity. Infineon is a global company headquartered in Neubiberg, Germany, and it was originally a part of Siemens AG before being spun off.

Application

The IRS21867STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is commonly used in applications such as motor control, power supplies, DC-DC converters, and renewable energy systems like solar inverters. Its ability to drive high-side and low-side MOSFETs/IGBTs makes it suitable for various industrial and consumer applications requiring efficient power switching and energy conversion.

Equivalent

The IRS21867STRPBF is a high-side and low-side driver IC. Equivalent products include the FAN73832 from ON Semiconductor, the UCC27714 from Texas Instruments, and the 2ED2183S06F from Infineon Technologies. Ensure compatibility by checking the specific features and electrical parameters as they may vary slightly between manufacturers.

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