IRLML0060TRPBF

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IRLML0060TRPBF

IRLML0060 - 20V-100V N-CHANNEL S

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 2.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 92mOhm @ 2.7A, 10V
Vgs(th)(Max)@Id 2.5V @ 25µA
GateCharge(Qg)(Max)@Vgs 2.5 nC @ 4.5 V
Vgs(Max) ±16V
InputCapacitance(Ciss)(Max)@Vds 290 pF @ 25 V
PowerDissipation(Max) 1.25W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage Micro3™/SOT-23

Tổng quan

Description

The IRLML0060TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 5.2A. This device is notable for its low on-resistance (R_DS(on)), typically around 0.025Ω, which helps minimize power losses during operation. The IRLML0060TRPBF is housed in a compact SOT-23 package, making it suitable for space-constrained designs.
This MOSFET is commonly used in power management, switching applications, and in driving loads such as motors and LEDs. Its logic-level gate threshold voltage allows it to be easily driven by low-voltage signals, making it compatible with various microcontrollers and digital circuits. Additionally, the “TRPBF” suffix indicates that the device is RoHS compliant, ensuring it meets environmental standards for restricted hazardous substances.
Overall, the IRLML0060TRPBF is a versatile and efficient choice for modern electronic designs requiring reliable switching performance.

Features

The IRLML0060TRPBF is a N-channel MOSFET designed for low voltage applications. Key features include:
1. Low On-State Resistance (R_DS(on)): Typically around 0.045 ohms at V_GS = 10V, ensuring efficient power handling.
2. High Current Rating: Capable of handling continuous drain current up to 60A, making it suitable for high power applications.
3. Fast Switching Speed: Allows for quick turn-on and turn-off times, improving efficiency in switching applications.
4. Low Gate Threshold Voltage (V_GS(th)): Typically between 1V to 2V, enabling operation with low gate drive voltages.
5. Package Type: Available in a small surface-mount package (SOT-23), facilitating compact design layouts.
6. Thermal Performance: Designed to handle thermal dissipation effectively, optimizing reliability in various environments.
7. Applications: Ideal for use in power management, motor control, and switching power supplies.
Overall, the IRLML0060TRPBF is suited for applications requiring efficient power switching and compact size.

Package

The IRLML0060TRPBF is packaged in a small, surface-mount SOT-23 package. This compact type is designed for efficient thermal performance and space-saving applications in electronic circuits.

Manufacturer

The IRLML0060TRPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon is a leading company in the semiconductor industry, specializing in the development and production of a wide range of electronic components, including power semiconductors, microcontrollers, and sensors. The company is known for its focus on automotive, industrial, and security applications, providing innovative solutions that enhance energy efficiency and performance in various electronic systems. Infineon operates globally and is recognized for its commitment to advancing technology in power management and digital security.

Application

The IRLML0060TRPBF is a N-channel MOSFET primarily used in applications such as power management, battery management systems, load switching, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it ideal for efficient power amplification and control in consumer electronics, automotive applications, and renewable energy systems.

Equivalent

The IRLML0060TRPBF is an N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and Si2302. For higher current applications, alternatives like the IRLML2502 or AO3400 can also be considered. Always check the specific electrical characteristics and package compatibility to ensure they meet your requirements.

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