IRLL024NTRPBF

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IRLL024NTRPBF

MOSFET N-CH 55V 3.1A SOT223

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 3.1A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4V, 10V
RdsOn(Max)@IdVgs 65mOhm @ 3.1A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 15.6 nC @ 5 V
Vgs(Max) ±16V
InputCapacitance(Ciss)(Max)@Vds 510 pF @ 25 V
PowerDissipation(Max) 1W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223

Tổng quan

Description

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To provide an accurate introduction, more information about the context and specific area of focus for IRLL024NTRPBF would be needed.

Features

The IRLL024NTRPBF is an N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to moderate voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 24A, allowing it to support high current loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.025 ohms, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for efficient switching with low drive voltages.
5. Package Type: It comes in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Applications: Commonly used in power management circuits, motor control, and other applications requiring efficient switching performance.
Overall, the IRLL024NTRPBF is recognized for its efficiency, reliability, and versatility in various electronic applications.

Package

The IRLL024NTRPBF is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The IRLL024NTRPBF is an N-channel MOSFET with a pin count of 4. The pin functions are as follows:
1. Gate (G): Controls the MOSFET operation; voltage applied here turns the device on or off.
2. Drain (D): The output terminal where the load is connected; current flows from the drain when the MOSFET is on.
3. Source (S): The terminal that connects to the ground or negative side of the circuit; current flows out of the source when the MOSFET is on.
4. Tab/Case: Used for heat dissipation; typically connected to the source in surface mount configurations.
This device is designed for low on-resistance and high-speed switching applications, making it suitable for power management, motor control, and other switching applications in electronic circuits.

Manufacturer

The IRLL024NTRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing semiconductor and system solutions for automotive, industrial, and multimarket applications. The company focuses on key areas such as power management, automotive components, and security technologies. With a strong emphasis on innovation and sustainability, Infineon plays a significant role in advancing technologies that support energy efficiency and smart mobility.

Application

The IRLL024NTRPBF is a N-channel MOSFET used in various applications including power management, motor control, and switching power supplies. It is suitable for low-voltage high-speed switching applications, making it ideal for use in automotive, industrial, and consumer electronics. Its low on-resistance and high current handling capabilities enhance efficiency in power conversion and signal routing applications.

Equivalent

The IRLL024NTRPBF is an N-channel MOSFET. Equivalent products include the IRLZ24N, STP16NF06, and AO3400. Always check the specific datasheet for parameters like Vds, Id, and Rds(on) to ensure compatibility for your application.

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