IRGP35B60PDPBF

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IRGP35B60PDPBF

IGBT 600V 60A 308W TO247AC

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Supplier Infineon Technologies
Package Tube
ProductStatus Obsolete
IGBTType NPT
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 60 A
Current-CollectorPulsed(Icm) 120 A
Vce(on)(Max)@VgeIc 2.55V @ 15V, 35A
Power-Max 308 W
SwitchingEnergy 220µJ (on), 215µJ (off)
InputType Standard
GateCharge 160 nC
Td(on/off)@25°C 26ns/110ns
TestCondition 390V, 22A, 3.3Ohm, 15V
ReverseRecoveryTime(trr) 42 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Tổng quan

Description

The IRGP35B60PDPBF is an N-channel insulated gate bipolar transistor (IGBT) designed for high-efficiency power applications. It combines the advantages of both MOSFETs and bipolar transistors, offering high input impedance and low conduction losses. This IGBT can handle a maximum voltage of 600V and a continuous current of 35A, making it suitable for applications such as motor drives, inverters, and power converters.
Key features include a low saturation voltage, fast switching speed, and robust thermal performance, facilitating better energy efficiency and reduced heat generation. The device is packaged in a TO-220 format, allowing for effective heat dissipation and easier integration into circuits.
The IRGP35B60PDPBF is often used in industrial applications, renewable energy systems, and electric vehicles, where reliable and efficient power management is critical. Its design is optimized for high-frequency operations, ensuring effective performance in demanding environments. This makes it a popular choice for engineers looking to enhance the efficiency and reliability of their power electronic systems.

Features

The IRGP35B60PDPBF is an N-channel insulated gate bipolar transistor (IGBT) designed for high-performance applications. Key features include:
- Voltage Rating: 600V, suitable for various power conversion applications.
- Current Rating: Capable of handling up to 35A continuous collector current.
- Low Switching Losses: Optimized for fast switching, enhancing efficiency in PWM applications.
- Thermal Performance: Features a low thermal resistance, allowing for better heat dissipation.
- Gate-Emitter Voltage: Rated at ±20V, providing robust gate drive options.
- Rise and Fall Times: Quick turn-on and turn-off times facilitate higher frequency operations.
- Robustness: Designed to withstand various operating conditions, enhancing reliability.
This IGBT is typically used in industrial motor drives, inverters, and other high-power applications requiring efficient switching performance.

Package

The IRGP35B60PDPBF is packaged in a TO-220 format, which is a type of package commonly used for power transistors. This package allows for efficient heat dissipation and is designed for easy mounting on heatsinks in power electronics applications.

Pinout

The IRGP35B60PDPBF is an insulated gate bipolar transistor (IGBT) designed for high-voltage applications. It features a total of 6 pins. Here’s a concise overview of the pin configuration and their functions:
1. Gate (G) - Pin 1: Controls the switching of the IGBT by applying a voltage to turn it on or off.
2. Collector (C) - Pin 2: The main current-carrying terminal of the IGBT; connected to the load.
3. Emitter (E) - Pin 3: Returns the current to the power source; completes the circuit.
4. Collector (C) - Pin 4: Another collector terminal, often used for enhanced power handling.
5. Emitter (E) - Pin 5: Another emitter terminal, providing flexibility in circuit design.
6. Base (B) - Pin 6: Used for additional control in some configurations.
This IGBT is suitable for applications such as motor drives, UPS systems, and induction heating, with a voltage rating of 600V and a current rating of 35A.

Manufacturer

The IRGP35B60PDPBF is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is known for its focus on power semiconductors, microcontrollers, and sensors, catering to various industries, including automotive, industrial power control, and consumer electronics. The company emphasizes innovation and sustainability, providing advanced technologies that enable efficient energy management and connectivity. Infineon operates worldwide, leveraging its expertise to drive advancements in the Internet of Things (IoT), electric vehicles, and renewable energy systems.

Application

The IRGP35B60PDPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications. Common application areas include industrial motor drives, uninterruptible power supplies (UPS), renewable energy systems like solar inverters, and high-frequency switching in power supplies. Its robust performance makes it suitable for applications requiring efficient power conversion and control in medium to high voltage environments.

Equivalent

The IRGP35B60PDPBF is a 600V, 35A IGBT. Equivalent products include:
1. SGW35N60S
2. FGA35N60
3. MIGBT35N60
4. IRG4PH50KD
5. STGW35NC60
Always verify specifications and ratings for compatibility in applications.

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