IRGIB10B60KD1P

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IRGIB10B60KD1P

IGBT 600V 16A 44W TO220FP

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Bulk,Tube
ProductStatus Obsolete
IGBTType NPT
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 16 A
Current-CollectorPulsed(Icm) 32 A
Vce(on)(Max)@VgeIc 2.1V @ 15V, 10A
Power-Max 44 W
SwitchingEnergy 156µJ (on), 165µJ (off)
InputType Standard
GateCharge 41 nC
Td(on/off)@25°C 25ns/180ns
TestCondition 400V, 10A, 50Ohm, 15V
ReverseRecoveryTime(trr) 79 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-220-3 Full Pack

Tổng quan

Description

IRGIB10B60KD1P is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications in power electronics. It combines the advantages of both MOSFETs and bipolar transistors, offering high efficiency and fast switching capabilities. The "10" in the name typically indicates a current rating of 10A, while "60" suggests a voltage rating of 600V. This device is commonly used in applications such as motor drives, inverters, and power converters, where efficient control of electrical power is essential.
The IGBT features a low on-state voltage drop, which minimizes power losses during operation, and it is designed for easy integration into power modules or systems. Additionally, it is equipped with a gate drive voltage that allows for straightforward control, making it suitable for both industrial and consumer applications. Its robust design ensures reliability under high temperatures and varying load conditions. Overall, the IRGIB10B60KD1P is an important component for engineers looking to enhance the performance of power electronic systems.

Features

The IRGIB10B60KD1P is an insulated gate bipolar transistor (IGBT) designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. Current Rating: 10A, making it ideal for various industrial and consumer applications.
3. Low Conduction Loss: Offers improved efficiency due to lower on-state voltage drop.
4. Fast Switching Speed: Enables high-frequency operation, enhancing performance in inverter and motor drive applications.
5. Thermal Stability: Good thermal performance allows for reliable operation in demanding environments.
6. Isolation: Provides electrical isolation between the gate and collector, enhancing safety in circuit designs.
7. TO-220 Package: Facilitates easy mounting and heat dissipation.
Overall, the IRGIB10B60KD1P is well-suited for applications in renewable energy systems, power converters, and motor control, offering a balance of performance, efficiency, and thermal management.

Package

The IRGIB10B60KD1P is typically housed in a TO-220 package type. This package provides effective heat dissipation and is commonly used for high-power applications in semiconductor devices.

Pinout

The IRGIB10B60KD1P is an insulated gate bipolar transistor (IGBT) used for high-power applications. It features a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the switching of the IGBT.
2. Collector (C) - The terminal through which the main current flows when the device is on.
3. Emitter (E) - The terminal that allows current to exit when the device is switched on.
4. Collector (C) - The second collector pin, used for connecting to the load.
5. Emitter (E) - The second emitter pin, providing flexibility in circuit design.
6. Gate (G) - The second gate pin for optimal control.
This device is typically used in applications such as motor drives, induction heating, and power conversion systems due to its high efficiency and fast switching capabilities.

Manufacturer

The IRGIB10B60KD1P is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing semiconductors and system solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on power semiconductors, sensors, microcontrollers, and security solutions, positioning itself as a key player in the semiconductor industry. Infineon emphasizes innovation and sustainability in its products, aiming to enable energy efficiency and advanced technologies across multiple sectors.

Application

The IRGIB10B60KD1P is an insulated gate bipolar transistor (IGBT) used primarily in industrial applications. Its application areas include motor drives, power inverters, renewable energy systems (like solar and wind), uninterruptible power supplies (UPS), and induction heating. It is ideal for high-efficiency and high-power switching applications due to its fast switching capabilities and low conduction losses.

Equivalent

The IRGIB10B60KD1P is an IGBT module. Equivalent products include the following:
1. FGA25N60 - Fairchild Semiconductor
2. MG100J3YS50 - Mitsubishi Electric
3. SKM100GB123D - Semikron
4. IXGH40N60C3 - IXYS Corporation
Always check specifications for compatibility in your application.

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