IRG4PH30KPBF

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IRG4PH30KPBF

IGBT 1200V 20A 100W TO247AC

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 20 A
Current-CollectorPulsed(Icm) 40 A
Vce(on)(Max)@VgeIc 4.2V @ 15V, 10A
Power-Max 100 W
SwitchingEnergy 640µJ (on), 920µJ (off)
InputType Standard
GateCharge 53 nC
Td(on/off)@25°C 28ns/200ns
TestCondition 960V, 10A, 23Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Tổng quan

Description

IRG4PH30KPBF is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It is typically used in power management systems, such as DC-DC converters, motor drivers, and power supply circuits. The "IR" prefix indicates that it is produced by International Rectifier, a well-known manufacturer of power semiconductor devices.
The "G" in the model name designates that it features a gate drive voltage, while "4PH" implies a specific configuration or feature set that may relate to performance specifications like voltage, current ratings, or thermal characteristics. "30KPBF" signifies the voltage rating (up to 30V) and that the device is lead-free (Pb-free), adhering to environmental regulations like RoHS.
In summary, IRG4PH30KPBF is used in applications requiring efficient power management, with a focus on minimizing energy losses and ensuring reliability in electrical circuits. For precise specifications, datasheets from the manufacturer should be consulted.

Features

The IRG4PH30KPBF is a high-voltage, N-channel MOSFET designed for a variety of applications, including power management and switching. Key features include:
1. Voltage Rating: It typically supports high voltages, allowing for use in demanding environments.
2. Low On-Resistance: This characteristic minimizes power loss during operation, improving overall efficiency.
3. High-Speed Switching: Designed for fast switching applications, making it suitable for high-frequency operations.
4. Low Gate Charge: Facilitates quicker turn-on and turn-off times, enhancing performance in PWM applications.
5. Thermal Performance: Good thermal stability, often with a specified maximum junction temperature, suitable for various cooling methods.
6. Package Options: Available in compact packages, facilitating space-saving in circuit designs.
These features make the IRG4PH30KPBF ideal for applications in power supplies, motor control, and automotive systems, where efficiency and reliability are crucial.

Package

The IRG4PH30KPBF is packaged in a TO-220 form factor. This package type is designed for high-power applications, providing good thermal performance and ease of mounting on heatsinks.

Pinout

The IRG4PH30KPBF is an insulated gate bipolar transistor (IGBT) designed for various power electronics applications. It typically comes in a TO-247 package, which has a pin count of four.
Pin Functions:
1. Collector (C): This is the main terminal where the high voltage is connected.
2. Gate (G): This terminal is used to control the device, allowing it to turn on and off by applying a voltage.
3. Emitter (E): This terminal is connected to the ground or reference point and allows current to flow out of the device.
4. Baseplate (B): Some packages include a baseplate that may be connected to the emitter for better heat dissipation.
The IRG4PH30KPBF is designed for applications such as motor drives, power inverters, and other high-frequency switching applications, providing efficient performance and thermal management.

Manufacturer

The IRG4PH30KPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Germany. The company specializes in developing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors for various industries such as automotive, industrial, and consumer electronics. Infineon focuses on innovative technologies that improve energy efficiency and system performance, playing a significant role in the advancement of smart mobility, IoT, and renewable energy applications.

Application

The IRG4PH30KPBF is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) used in various applications, including motor drives, power inverters, and power supplies. It is particularly suitable for energy-efficient systems in industrial automation, renewable energy systems (like solar inverters), and traction applications in rail systems, where rapid switching and high efficiency are crucial.

Equivalent

The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) suitable for high-voltage and high-current applications. Equivalent products include:
1. IXGH60N60 - 600V, 60A IGBT
2. FGA25N120ANTD - 1200V, 25A IGBT
3. MG100J2YS3 - 1200V, 100A IGBT
Always verify specifications for voltage, current ratings, and switching characteristics before replacement.

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