IRG4PC50UPBF

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IRG4PC50UPBF

IGBT 600V 55A 200W TO247AC

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 55 A
Current-CollectorPulsed(Icm) 220 A
Vce(on)(Max)@VgeIc 2V @ 15V, 27A
Power-Max 200 W
SwitchingEnergy 120µJ (on), 540µJ (off)
InputType Standard
GateCharge 180 nC
Td(on/off)@25°C 32ns/170ns
TestCondition 480V, 27A, 5Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Tổng quan

Description

IRG4PC50UPBF is likely a reference to a specific model or type of electronic component, possibly a power semiconductor such as an insulated gate bipolar transistor (IGBT) or a similar device. These components are commonly used in power electronics for applications involving high voltage and current, such as in inverters, motor drives, and power supply systems.
The designation typically indicates certain specifications, such as voltage rating, current rating, package type, and other features relevant to its operation. Understanding the characteristics of IRG4PC50UPBF would involve looking into its datasheet for detailed information on its electrical parameters, thermal performance, and recommended applications.
If you need more specific details about its applications or specifications, please refer to the manufacturer's datasheet or technical documents.

Features

The IRG4PC50UPBF is an N-channel power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 50V, making it suitable for various power applications.
2. Current Rating: With a continuous drain current (I_D) of up to 60A, it efficiently handles significant power loads.
3. R_DS(on): The on-resistance is typically low (around 0.05 ohms), which enhances efficiency and reduces heat generation during operation.
4. Fast Switching: Designed for rapid switching capabilities, it is ideal for applications like switch-mode power supplies and motor control.
5. Thermal Performance: It offers excellent thermal stability, with a maximum junction temperature of 150°C, allowing for reliable operation in demanding environments.
6. Package Type: Typically available in a TO-220 package, contributing to effective heat dissipation.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for high-efficiency power management.
These features make the IRG4PC50UPBF a versatile choice for various electronic designs.

Package

The IRG4PC50UPBF is typically packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power transistors in various applications.

Pinout

The IRG4PC50UPBF is an IGBT (Insulated Gate Bipolar Transistor) device with a pin count of 4. The primary functions of this IGBT include high voltage switching applications in power electronics, such as inverters, motor drives, and power supplies.
The pin configuration typically consists of:
1. Gate (G) - The control terminal for turning the IGBT on and off.
2. Collector (C) - The main terminal for the output current, connecting to the load.
3. Emitter (E) - The terminal that connects to ground or the negative side of the power supply.
This device is known for its efficiency in handling high voltage and current, making it suitable for various industrial applications. For specific applications and electrical characteristics, refer to the manufacturer's datasheet.

Manufacturer

The IRG4PC50UPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the design and development of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. The company is known for its innovations in power management and energy efficiency, contributing significantly to advancements in smart power technologies.

Application

The IRG4PC50UPBF is an insulated gate bipolar transistor (IGBT) commonly used in various applications, including motor drives, industrial power converters, renewable energy systems (like solar inverters), and electric vehicle traction systems. Its high efficiency and fast switching capabilities make it suitable for controlling power in demanding environments, enhancing performance in energy conversion and management systems.

Equivalent

The IRG4PC50UPBF is an IGBT (Insulated Gate Bipolar Transistor) used in power applications. Equivalent products include:
1. FGA50N60 - from Fairchild Semiconductor
2. MG50J6ES - from Mitsubishi Electric
3. STGW30H45 - from STMicroelectronics
Always verify specifications like voltage, current ratings, and switching characteristics for compatibility.

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Hãng DHL: Chi phí vận chuyển dao động từ $ 25- $ 45 (0,5kg), với thời gian giao hàng ước tính là 2-5 ngày làm việc.

FedEx: Chi phí vận chuyển dao động từ $ 25- $ 40 (0,5kg), với thời gian giao hàng ước tính là 3-7 ngày làm việc.

Sản phẩm UPS: Chi phí vận chuyển dao động từ $ 25- $ 45 (0,5kg), với thời gian giao hàng ước tính là 3-7 ngày làm việc.

TNT: Chi phí vận chuyển dao động từ $ 25- $ 65 (0,5kg), với thời gian giao hàng ước tính là 3-7 ngày làm việc.

EMS: Chi phí vận chuyển dao động từ $ 30- $ 50 (0,5kg), với thời gian giao hàng ước tính là 7-15 ngày làm việc.

Đăng ký Air Mail: Chi phí vận chuyển là $ 2- $ 4 (0.1kg), với thời gian giao hàng ước tính là 5-20 ngày làm việc.

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