IRG4PC50UDPBF

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IRG4PC50UDPBF

IGBT 600V 55A 200W TO247AC

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Supplier Infineon Technologies
Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 55 A
Current-CollectorPulsed(Icm) 220 A
Vce(on)(Max)@VgeIc 2V @ 15V, 27A
Power-Max 200 W
SwitchingEnergy 990µJ (on), 590µJ (off)
InputType Standard
GateCharge 180 nC
Td(on/off)@25°C 46ns/140ns
TestCondition 480V, 27A, 5Ohm, 15V
ReverseRecoveryTime(trr) 50 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Tổng quan

Description

IRG4PC50UDPBF is a type of integrated circuit (IC) that functions as a high-performance, low-dropout (LDO) voltage regulator. It is designed to provide a stable output voltage with minimal variation under varying load conditions. The "IRG" typically represents the manufacturer or product family, while "4PC" may refer to specific features or configurations. "50" usually indicates the output current capacity, and "UDPBF" generally signifies it is a lead-free, environmentally friendly product.
These regulators are commonly used in applications requiring efficient power management, such as portable electronics, telecommunications, and automotive systems. They ensure that sensitive components receive a consistent voltage supply, enhancing system reliability and performance. The LDO's low dropout voltage means it can maintain regulation even with a small difference between input and output voltages, making it ideal for battery-operated devices.

Features

The IRG4PC50UDPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for high-performance switching applications. Key features include:
1. Voltage Rating: Capable of handling up to 600V, making it suitable for various industrial applications.
2. Current Rating: Offers a maximum continuous collector current of 50A, providing robust performance in power conversion systems.
3. Low Conduction Losses: The device features low on-state voltage drop, which results in improved efficiency and reduced heat generation.
4. Fast Switching Speed: Enables high-frequency operation, enhancing overall system performance.
5. Thermal Stability: Built with a low thermal resistance, allowing for better heat dissipation and thermal management.
6. TO-220 Package: The package design supports easy mounting and effective heat sinking, facilitating better integration within systems.
7. Ruggedness: Designed for high reliability and durability in demanding environments.
These features make the IRG4PC50UDPBF suitable for applications in inverters, converters, and motor drives.

Package

The IRG4PC50UDPBF is packaged in a TO-220 form factor. This package type is commonly used for power transistors and facilitates efficient heat dissipation and mounting on heatsinks.

Pinout

The IRG4PC50UDPBF is an insulated gate bipolar transistor (IGBT) designed for power applications. It has a total of 6 pins. The pin functions are as follows:
1. Gate (G) - Controls the on/off state of the IGBT.
2. Collector (C) - The main current-carrying terminal where the load is connected.
3. Emitter (E) - The terminal that connects to ground or the negative side of the power supply.
The remaining pins are typically for additional functionalities or for isolating the device in specific configurations, depending on the package type. This IGBT is used in applications such as motor drives, inverters, and other power control circuits, where efficient switching is required.

Manufacturer

The IRG4PC50UDPBF is manufactured by Infineon Technologies, a global semiconductor company headquartered in Germany. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial power control, and security technologies. The company focuses on enabling a more connected and sustainable world by providing innovative solutions that enhance energy efficiency, reliability, and performance in electronics.

Application

The IRG4PC50UDPBF is an insulated gate bipolar transistor (IGBT) commonly used in various applications, including motor drives, industrial automation, and power converters. It is suitable for use in renewable energy systems like solar inverters and wind power converters, as well as in electric vehicles and traction applications. Its high efficiency and fast switching capabilities make it ideal for high-power applications requiring reliable and efficient performance.

Equivalent

The IRG4PC50UDPBF is an IGBT (Insulated Gate Bipolar Transistor). Equivalent products include the Infineon IGBT modules like the FF400R12ME4, the ON Semiconductor MBRF2045, and the Mitsubishi CM150DY-24NF. Always check the specifications for voltage, current ratings, and package type to ensure compatibility.

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