IRFU3410PBF

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IRFU3410PBF

MOSFET N-CH 100V 31A IPAK

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 31A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 39mOhm @ 18A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 56 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1690 pF @ 25 V
PowerDissipation(Max) 3W (Ta), 110W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage IPAK (TO-251AA)

Tổng quan

Description

IRFU3410PBF is a high-performance N-channel MOSFET designed for a variety of applications, including power management and signal switching. It features low on-resistance, which helps improve efficiency in power conversion applications. The device typically operates with a maximum drain-source voltage of around 40V and can handle continuous drain currents of up to 34A, making it suitable for use in power supplies, motor controllers, and automotive applications.
The IRFU3410PBF is packaged in a TO-220 housing, facilitating easy mounting and heat dissipation. Its robust specifications make it ideal for high-frequency switching applications, while its low gate threshold voltage ensures compatibility with various control circuits. Additionally, the PBF suffix indicates that this component is lead-free, aligning with environmental regulations for electronic components. Overall, the IRFU3410PBF is a versatile and reliable choice for designers seeking efficient power management solutions.

Features

The IRFU3410PBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 40V, making it suitable for a variety of power applications.
2. Current Rating: Capable of handling a continuous drain current (Id) of up to 50A, which is ideal for power switching.
3. Rds(on): The on-resistance is exceptionally low, typically around 0.05 ohms (at Vgs = 10V), ensuring efficient operation and reduced heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 1V to 3V, allowing it to be driven with lower gate voltages.
5. Package: It comes in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching Speed: This MOSFET features fast switching capabilities, which enhances the performance in PWM applications.
7. Applications: Commonly used in power supplies, motor drivers, and other high-efficiency switching applications.
Overall, the IRFU3410PBF is known for its reliability and efficiency in demanding electronic circuits.

Package

The IRFU3410PBF is available in a TO-220 package type. This package provides good thermal performance and is commonly used for power applications.

Pinout

The IRFU3410PBF is an N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G) - This pin controls the MOSFET's switching by applying a voltage.
2. Drain (D) - This pin is connected to the load and is where the current flows out of the MOSFET.
3. Source (S) - This pin serves as the reference point for the gate voltage and is connected to ground or the negative side of the load.
The device is designed for high-speed switching applications and can handle significant current and voltage levels, making it suitable for various power management tasks.

Manufacturer

The manufacturer of the IRFU3410PBF is International Rectifier, which is a subsidiary of Infineon Technologies. International Rectifier specializes in the design and production of power management semiconductors and solutions, including MOSFETs, IGBTs, and integrated circuits for various applications such as automotive, industrial, and consumer electronics. The company is known for its innovation in power conversion and energy efficiency technologies.

Application

The IRFU3410PBF is a N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor control, and power switching. Its low on-resistance and fast switching capabilities make it suitable for applications in portable devices, power supplies, and battery management systems. Additionally, it is utilized in automotive electronics and industrial automation for efficient power handling.

Equivalent

The IRFU3410PBF is a N-channel MOSFET. Equivalent products include:
1. STP75NF75 - STMicroelectronics
2. FQP75N75 - Fairchild Semiconductor
3. PM75R1K0 - Infineon
4. BTA20-600V - NXP Semiconductors
When selecting equivalents, consider voltage, current ratings, and RDS(on) specifications for compatibility. Always verify the specific application requirements.

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