IRFPF50PBF

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IRFPF50PBF

MOSFET N-CH 900V 6.7A TO247-3

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Thông số kỹ thuật

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number IRFPF50

Tổng quan

Description

The IRFPF50PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of 50A, making it suitable for a variety of power applications, including power supplies, motor drives, and converters.
Key specifications include a low on-resistance (R_DS(on)), typically around 0.05 ohms, which minimizes power loss during operation. The IRFPF50PBF is designed to handle significant switching frequencies, enhancing efficiency in high-performance circuits. Its thermal characteristics allow for effective heat dissipation, which is crucial in demanding applications.
The “PBF” suffix indicates it is lead-free, complying with RoHS (Restriction of Hazardous Substances) standards, making it environmentally friendly. Its TO-220 packaging allows for easy mounting on heatsinks. Overall, the IRFPF50PBF is a versatile component ideal for engineers looking for reliable performance in power management solutions.

Features

The IRFPF50PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 50V, making it suitable for various power applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 50A at 25°C, which allows for robust performance in demanding environments.
3. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.05 ohms, resulting in reduced power loss and improved efficiency during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling it to be driven by low-voltage control signals.
5. Fast Switching Speed: It supports high-frequency applications due to its rapid switching capabilities, making it ideal for applications such as switch-mode power supplies and motor control.
6. Thermal Resistance: Features a low junction-to-case thermal resistance, ensuring effective heat dissipation during operation.
These attributes make the IRFPF50PBF suitable for various applications including DC-DC converters, inverters, and power management systems.

Package

The IRFPF50PBF is typically packaged in a TO-220 form factor, which is a metal package designed for efficient heat dissipation and ease of mounting on heatsinks in power applications.

Pinout

The IRFPF50PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.

2. Drain (D) - This pin is where the current flows out of the device when it is in the "on" state. It connects to the load.

3. Source (S) - This pin is connected to the ground or the negative terminal of the power supply, serving as the reference point for the drain-source voltage.
The IRFPF50PBF is designed for high-speed switching applications, and it has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 50A. It is commonly used in power inverters, motor control, and other high-power applications.

Manufacturer

The IRFPF50PBF is manufactured by Infineon Technologies, a leading global semiconductor company. Infineon specializes in power semiconductors, microcontrollers, and other electronic components, serving various sectors including automotive, industrial, and consumer electronics. The company is known for its innovations in energy efficiency and high-performance solutions, playing a crucial role in the advancement of technologies related to power management and renewable energy. Founded in 1999 as a spin-off from Siemens AG, Infineon has established itself as a key player in the semiconductor industry.

Application

The IRFPF50PBF is an N-channel MOSFET commonly used in power applications such as power supplies, motor drives, and inverters. Its high voltage and current handling capabilities make it suitable for industrial automation, renewable energy systems, and electric vehicles. Additional applications include audio amplifiers, switching regulators, and RF amplifiers where efficient switching and thermal performance are critical.

Equivalent

The IRFPF50PBF is an N-channel MOSFET with a 55V, 50A rating. Equivalent products include:
1. IRF320 - 55V, 50A
2. FQP50N55 - 55V, 50A
3. STP50NF55 - 55V, 50A
4. SIHF50N55 - 55V, 50A
Ensure to check specific parameters like Rds(on) and gate threshold voltage for compatibility.

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