IRFP4768

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IRFP4768

Infineon

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Description

The IRFP4768 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. With a drain-source voltage rating of 55V and a continuous drain current of up to 70A, it is suitable for power management tasks in various electronic circuits.
Key features include a low on-resistance (R_DS(on)) of approximately 0.025 ohms, which minimizes conduction losses and enhances thermal performance. The device is often utilized in power supplies, motor drives, and DC-DC converters due to its fast switching capabilities and robustness.
The IRFP4768 typically comes in a TO-220 package, allowing for effective heat dissipation and easy mounting. Its gate threshold voltage is between 2V to 4V, making it compatible with low-voltage drive circuits. Overall, this MOSFET is favored in applications requiring high power efficiency and reliability.

Features

The IRFP4768 is a high-performance N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (VDS) of 55V.
2. Current Rating: Continuous drain current (ID) up to 70A, suitable for high-load applications.
3. RDS(on): Low on-resistance (typically around 0.025 ohms), minimizing conduction losses and improving efficiency.
4. Gate Threshold Voltage: VGS(th) range of 2-4V, allowing for easy drive with standard gate voltages.
5. High-Speed Switching: Fast switching capabilities, ideal for applications in power supplies, motor drivers, and DC-DC converters.
6. Package Type: Available in TO-220 and DPAK, facilitating heat dissipation and easy mounting.
7. Thermal Resistance: Low thermal resistance from junction to case, enhancing thermal performance.
These features make the IRFP4768 suitable for various applications, including automotive, industrial, and consumer electronics.

Package

The IRFP4768 is typically available in a TO-220 package, which is designed for high-power applications with good thermal dissipation characteristics.

Pinout

The IRFP4768 is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the MOSFET's switching and is used to apply voltage to turn the device on or off.
2. Drain (D) - The current flows out of this pin when the MOSFET is turned on. It connects to the load in a circuit.
3. Source (S) - This pin serves as the common reference point and is connected to the ground in most applications.
The IRFP4768 is designed for high-efficiency power applications, featuring a low on-resistance and high voltage capability.

Manufacturer

The IRFP4768 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in semiconductor solutions, focusing on power management, automotive, industrial, and security applications. The company is known for its innovation in energy efficiency and has a strong presence in the automotive sector, providing components for electric vehicles and advanced driver assistance systems. Infineon operates worldwide and is committed to sustainability and technological advancement in the semiconductor industry.

Application

The IRFP4768 is a high-power N-channel MOSFET primarily used in applications such as motor control, power inverters, switching power supplies, and audio amplifiers. Its high voltage and current ratings make it suitable for DC-DC converters, electric vehicles, and renewable energy systems like solar inverters. Additionally, it is utilized in industrial equipment and RF amplifiers.

Equivalent

The IRFP4768 is an N-channel MOSFET known for its high voltage and current capabilities. Equivalent products include:
1. IRF320
2. IRF4710
3. IRF3205
4. STP120N10F6
5. FDP047N05
Always verify specific ratings and characteristics, as they may vary between models.

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