IRFP4710PBF

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IRFP4710PBF

MOSFET N-CH 100V 72A TO247AC

100% gốc & amp; Mới

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6160 pF @ 25 V
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number IRFP4710

Tổng quan

Description

The IRFP4710PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance (Rds(on)) of around 0.035 ohms, which minimizes power loss during operation. With a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) rating of up to 70A at 25°C, it is suitable for various applications, including DC-DC converters, motor control, and power management systems.
The device is packaged in a TO-220 format, allowing for effective heat dissipation, which is critical for high-power applications. The IRFP4710PBF also has fast switching speeds, contributing to improved efficiency in power conversion. Its gate threshold voltage (Vgs(th)) ranges from 2V to 4V, making it compatible with standard logic-level driving signals. Overall, the IRFP4710PBF is widely used in the electronics industry for its performance, reliability, and versatility in power applications.

Features

The IRFP4710PBF is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.

2. Current Rating: Handles a continuous drain current (I_D) of up to 55A, allowing for efficient power management.
3. Low R_DS(on): Features a very low on-state resistance (R_DS(on)), typically around 0.08 ohms, which reduces power loss and improves thermal performance.
4. Fast Switching: Designed for fast switching speeds, ideal for high-frequency applications.
5. Package Type: Available in a TO-220 package, which improves heat dissipation and simplifies mounting.
6. Gate Threshold Voltage: Offers a low gate threshold voltage (V_GS(th)), typically between 2V and 4V, allowing for easy drive with low-voltage control signals.
7. Application Versatility: Commonly used in synchronous rectification, DC-DC converters, and motor control applications.
These features make the IRFP4710PBF a popular choice for engineers seeking reliable and efficient power solutions.

Package

The IRFP4710PBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is designed for through-hole mounting, making it suitable for high-power applications.

Pinout

The IRFP4710PBF is an N-channel MOSFET designed for high-speed switching applications. It features a total of three pins:
1. Gate (G): This pin controls the MOSFET's switching action. A voltage applied to this pin turns the device on, allowing current to flow from drain to source.

2. Drain (D): This is the terminal where the load connects. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This terminal is connected to the ground or the negative side of the power supply in typical configurations. It serves as the return path for current flowing through the MOSFET.
The IRFP4710PBF is commonly used in power supplies, motor controllers, and other applications requiring efficient power management due to its low on-resistance and high voltage handling capabilities.

Manufacturer

The IRFP4710PBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company focuses on energy efficiency, mobility, and security, catering to various industries such as automotive, industrial, and consumer electronics. Infineon is known for its innovative technologies and commitment to sustainability, making it a key player in the global semiconductor market.

Application

The IRFP4710PBF is a high-power N-channel MOSFET primarily used in applications such as DC-DC converters, motor drives, and power inverters. It is suitable for switching applications in power supplies, renewable energy systems, and electric vehicles. Its low on-resistance and high-speed switching capabilities make it ideal for efficient power management and amplification in various electronic circuits.

Equivalent

The IRFP4710PBF is an N-channel MOSFET. Equivalent products include:
1. STP75NF75 - STMicroelectronics
2. FQP75N06 - ON Semiconductor
3. P75NF75 - Nexperia
4. IRF3205 - Infineon
Always verify specifications like voltage, current, RDS(on), and package type to ensure compatibility for your specific application.

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