IRFP3710PBF

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IRFP3710PBF

MOSFET N-CH 100V 57A TO247AC

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 57A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 25mOhm @ 28A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 190 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3000 pF @ 25 V
PowerDissipation(Max) 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Tổng quan

Description

The IRFP3710PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a high voltage rating of up to 100V and a continuous drain current capacity of 70A, making it suitable for various demanding tasks such as DC-DC converters, motor control, and power inverters.
This MOSFET has a low on-resistance (R_DS(on)) of around 0.04 ohms, which reduces power losses and enhances thermal performance. It operates with a maximum gate-source voltage of ±20V, and its fast switching speeds make it ideal for high-frequency applications.
The IRFP3710PBF is also compatible with RoHS standards, emphasizing its environmental safety. Its TO-220 package allows for efficient heat dissipation, ensuring reliable performance in various electronic circuits. Overall, the IRFP3710PBF is a versatile and robust component for engineers and designers working in power electronics.

Features

The IRFP3710PBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: Continuous drain current (I_D) of up to 80A, providing robust performance in high-current scenarios.
3. R_DS(on): Low on-resistance (typically around 0.045Ω at V_GS of 10V), reducing power losses and enhancing efficiency.
4. Gate Threshold Voltage: V_GS(th) in the range of 2-4V, allowing for easy drive with standard logic levels.
5. Power Dissipation: Maximum power dissipation of 94W, enabling effective thermal management in design.
6. Package Type: Available in TO-220 package for easy mounting and heat dissipation.
7. Fast Switching: Suitable for applications requiring rapid switching, such as DC-DC converters and motor controls.
These features make the IRFP3710PBF ideal for automotive, industrial, and renewable energy applications where efficiency and reliability are critical.

Package

The IRFP3710PBF is typically packaged in a TO-220 case. This package type is designed for efficient heat dissipation, making it suitable for high-power applications.

Pinout

The IRFP3710PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin receives the control voltage to turn the MOSFET on or off.
2. Drain (D): This pin is the output where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The IRFP3710PBF is designed for high-power applications, featuring low on-resistance and a high voltage rating, making it suitable for power management circuits, motor drives, and other switching applications.

Manufacturer

The IRFP3710PBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions for various applications, including automotive, industrial, and communication sectors. The company focuses on power semiconductors, sensors, and microcontrollers, aiming to provide innovative technologies for energy efficiency, mobility, and security. Infineon is known for its commitment to sustainability and advancing technologies that support the transition to a greener economy.

Application

The IRFP3710PBF is an N-channel MOSFET primarily used in power electronics applications. Its key areas include DC-DC converters, motor drives, and power inverters, particularly in renewable energy systems like solar inverters. It is also utilized in high-efficiency switching applications and audio amplifiers due to its low RDS(on) and high-speed switching capabilities.

Equivalent

Equivalent products to the IRFP3710PBF MOSFET include the STP75NF75, FQP75N75, and PSMN2R8-80BS. Always check specifications such as voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.

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