IRFP27N60KPBF

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IRFP27N60KPBF

MOSFET N-CH 600V 27A TO247-3

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  • Gói TO-247-3
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Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 27A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 220mOhm @ 16A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 180 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4660 pF @ 25 V
PowerDissipation(Max) 500W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Tổng quan

Description

The IRFP27N60KPBF is a high-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring high voltage and current handling. It has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 27A, making it suitable for use in power supplies, motor control, and switching applications.
The device features low on-resistance (R_DS(on)), allowing for efficient operation with minimal power loss. Its fast switching capabilities enable high-frequency operation, enhancing overall system performance. The IRFP27N60KPBF is typically housed in a TO-220 package, which provides good thermal performance and ease of heat dissipation.
Additionally, the "KPBF" suffix indicates that the MOSFET is lead-free and compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring it meets environmental regulations. Overall, the IRFP27N60KPBF is an effective choice for engineers looking for reliable high-voltage switching solutions.

Features

The IRFP27N60KPBF is a N-channel MOSFET designed for high voltage and high current applications. Key features include:
- Voltage Rating: 600V maximum drain-source voltage (Vds).
- Current Rating: 27A continuous drain current (Id) at 25°C.
- Rds(on): Low on-state resistance, typically around 0.5 ohms, enhancing efficiency.
- Gate Threshold Voltage: 2-4V, allowing for easy drive with logic-level signals.
- Fast Switching Speed: Suitable for high-frequency applications, reducing switching losses.
- Package: Available in TO-220 and DPAK packages, facilitating thermal management.
- Robust Construction: Designed for durability in harsh environments, with a high level of immunity to gate-to-source over-voltage.
These features make the IRFP27N60KPBF suitable for applications such as power supplies, motor drives, and high-voltage switching.

Package

The IRFP27N60KPBF is packaged in a TO-220 format, which is a three-terminal package commonly used for high-power transistors. This package type allows for efficient heat dissipation and is suitable for various applications in power electronics.

Pinout

The IRFP27N60KPBF is a N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied to the gate determines whether the MOSFET is in the on or off state.

2. Drain (D): This is the terminal through which the current flows out of the MOSFET when it is in the on state. The drain is connected to the load.
3. Source (S): This terminal is connected to the ground or the negative side of the power supply. The current flows into the source when the MOSFET is conducting.
The IRFP27N60KPBF is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of up to 27A.

Manufacturer

The IRFP27N60KPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Infineon serves various sectors, including automotive, industrial, and consumer electronics, focusing on innovation and energy efficiency. The company is known for its contributions to the development of power management technologies and plays a significant role in advancing automotive and industrial applications through its semiconductor products.

Application

The IRFP27N60KPBF is a high-voltage N-channel MOSFET primarily used in applications such as power supplies, motor control, switch-mode power supplies (SMPS), and inverters. It is suitable for high-frequency switching, offering efficient performance in automotive and industrial electronics, as well as in power amplifiers and audio applications. Its robust design and high current handling capability make it ideal for various power management tasks.

Equivalent

The IRFP27N60KPBF is a N-channel MOSFET. Equivalent products include:
1. STP27NM60 (STMicroelectronics)
2. MTP27N60E (ON Semiconductor)
3. FDH27N60 (Fairchild Semiconductor)
4. NTP27N60 (NXP Semiconductors)
Always check the specific parameters (Vds, Id, Rds(on), etc.) to ensure compatibility for your application.

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